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Millimeter wave band power amplifier based on flexible chip integrated wave guide technology

A substrate-integrated waveguide and power amplifier technology, which is applied to waveguide devices, amplifiers with distributed constants in the coupling network, and electrical components, can solve problems such as narrow operating bandwidth, high processing precision requirements, and complex design, and achieve high synthesis efficiency effect

Inactive Publication Date: 2009-08-26
SOUTHEAST UNIV
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Problems solved by technology

[0004] Technical problem: The purpose of this invention is to solve the problems of narrow working bandwidth, complex design, high processing precision requirements, difficult device installation, expensive production cost, and difficult circuit debugging and testing in the current millimeter wave power synthesis amplifier technical solution.

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  • Millimeter wave band power amplifier based on flexible chip integrated wave guide technology
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  • Millimeter wave band power amplifier based on flexible chip integrated wave guide technology

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Embodiment Construction

[0018] A design method for synthetic millimeter-wave power amplifiers based on flexible substrate integrated waveguide (FSIW) technology. In this method, the basic components of the power amplifier are a pair of thin substrate integrated waveguides (SIW power splitter / Synthesis unit), the symmetrical wedge transition structure on the unit is stacked together, and inserted into the input and output waveguides tightly along the narrow wall of the waveguide respectively, the part of the SIW power division / synthesis unit outside the waveguide is bent, as a flexible waveguide For use, the MMIC power amplifier device and its accessories are respectively installed in the middle of each SIW power division / combination unit. Since the unit lengths are different, in order to ensure that the transmission phase of each unit is consistent, the unequal width scheme is used to design the substrate integrated waveguide on the unit. figure 1 A schematic diagram of the structure of the SIW powe...

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Abstract

A millimeter wave band power amplifier based on flexible chip integrated wave guide technology can be used as a technical proposal for a final power amplifier of a transmitter in a millimeter wave system. The basic constitutive unit of the power amplifier is a pair of thin chip integrated wave guides containing a symmetrical wedge transition structure. The symmetrical wedges on the unit are respectively inserted into the corresponding input and output rectangular metal wave guide along the wave guide thin wall so that the power distribution and power synthesization in the wave guides with broadband and high efficiency can be realized. Meanwhile, as signal FSIW is led out of the wave guide to be amplified, the mounting, debugging and radiating of the amplifier are facilitated. The invention also realizes a Ka waveband synthesizing broadband power amplifier, of which the maximum output power at the 26.5GHz is about 4.2W (continuous wave), the maximum synthetic efficiency at the 26.4GHz is about 72.5%, and the synthetic efficiency between 25.1GHz and 28.4GHz is over 60%.

Description

technical field [0001] The invention relates to a method and device for realizing a power synthesis amplifier applied to a microwave and millimeter wave system, and belongs to the technical field of microwave and millimeter waves. Background technique [0002] In the millimeter wave frequency band, due to the limitation of microwave monolithic integrated circuit (MMIC) process level, the maximum output power that a single MMIC power amplifier chip can provide often cannot meet the system design requirements. An effective way to solve this problem is to use power combining technology to build the final power amplifier of the transmitter. Previous studies have shown that with the increase of the number of MMIC devices in the power amplifier, spatial power combining has higher combining efficiency than planar power combining. However, the design and manufacture of the space power combining circuit are relatively complicated, and the production cost is also relatively high. ...

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Application Information

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IPC IPC(8): H03F3/60H01P1/00
Inventor 洪伟朱红兵田玲
Owner SOUTHEAST UNIV
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