Crystal continuous producing device and method for continuously producing polysilicon by using same

A production equipment, polycrystalline silicon technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc., can solve the problem of continuous production of crystals, etc.

Inactive Publication Date: 2011-10-12
BYD CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the present invention is to overcome the shortcoming that the preparation method of crystal, especially solar-grade polysilicon, cannot be produced continuously in the prior art, and provide a continuous production equipment capable of continuously producing crystals, especially solar-grade polysilicon, and a method for continuously producing polysilicon using the equipment

Method used

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  • Crystal continuous producing device and method for continuously producing polysilicon by using same
  • Crystal continuous producing device and method for continuously producing polysilicon by using same

Examples

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Effect test

Embodiment 1

[0046] This example is used to illustrate the method for continuously producing polysilicon using the continuous crystal production equipment of the present invention.

[0047] In a helium atmosphere, use the figure 1 In the device shown, solar-grade silicon with a purity of 99.999% (5N-grade silicon produced by Tianjin Sunshine Metal Silicon Co., Ltd.) is used as solid silicon 1 and put into the built-in Si through the feed port a. 3 N 4 Layered quartz crucible (purchased from Hebei Jinglong Group's up and down transparent upper end is a 12-inch high-purity quartz crucible) 3, heated by a heater 4 arranged around the quartz crucible 3, so that the solid silicon 1 becomes Silicon 2 in the molten state, the silicon 2 in the molten state enters a guide roller pair 8 at the end of a temperature of 1430°C after coming out of the discharge port b of the quartz crucible 3 (the quartz guide roller has a layer of Si on its outside. 3 N 4 The ceramic layer, the axial length of the g...

Embodiment 2

[0049] This example is used to illustrate the method for continuously producing polysilicon using the continuous crystal production equipment of the present invention.

[0050] In a helium atmosphere, use the figure 1 In the device shown, solar-grade silicon with a purity of 99.9999% (6N-grade silicon produced by Tianjin Sunshine Metal Silicon Co., Ltd.) is used as solid silicon 1 and put into the built-in Si through the feed port a. 3 N 4 Layered quartz crucible (purchased from Hebei Jinglong Group's up and down transparent upper end is a 12-inch high-purity quartz crucible) 3, heated by a heater 4 arranged around the quartz crucible 3, so that the solid silicon 1 becomes Silicon 2 in the molten state, the silicon 2 in the molten state enters a guide roller pair 8 at the end of a temperature of 1470°C after coming out of the discharge port b of the quartz crucible 3 (the quartz guide roller has a layer of Si on its outside. 3 N 4 The ceramic layer, the axial length of the ...

Embodiment 3

[0052] This example is used to illustrate the method for continuously producing polysilicon using the continuous crystal production equipment of the present invention.

[0053] In a helium atmosphere, use the figure 1 In the device shown, solar-grade silicon with a purity of 99.9999% (6N-grade silicon produced by Tianjin Sunshine Metal Silicon Co., Ltd.) is used as solid silicon 1 and put into the built-in Si through the feed port a. 3 N 4 Layered quartz crucible (purchased from a 12-inch high-purity quartz crucible with a transparent upper end customized by Hebei Jinglong Group) 3, heated by a heater 4 arranged around the quartz crucible 3, so that the solid silicon 1 becomes It is silicon 2 in a molten state, and the silicon 2 in a molten state enters a guide roller pair 8 at the end of a temperature of 1500°C after coming out of the discharge port b of the quartz crucible 3 (the quartz guide roller has a layer of Si on its outside. 3 N 4 The ceramic layer, the axial leng...

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Abstract

The invention provides a crystal continuous producing device which comprises a melting device and a plurality of crystallizing forming devices, wherein the melting device is provided with a feeding hole and a discharging hole, and the crystallizing forming devices are sequentially arranged. A crystallizing forming device on the end part in the crystallizing forming devices which are sequentially arranged is used for receiving the liquid in a melting state from the discharging hole, and enables the liquid in a melting state to be cooled and crystallized. The crystallizing forming devices sequentially arranged behind the crystallizing forming device of the end part are used for enabling the crystal from the crystallizing forming device of the end part to continuously grow and form zoned crystal. The invention also provides a continuous producing method of polysilicon. The crystal continuous producing device of the invention can continuously produce crystal, and particularly, the polycrystal prepared by the crystal continuous producing device and the polysilicon continuous producing method of the invention can be used for preparing a polysilicon solar battery.

Description

technical field [0001] The invention relates to a crystal continuous production equipment and a method for continuously producing polysilicon using the equipment. Background technique [0002] Solar energy has become the preferred energy source to solve the energy crisis and environmental degradation due to its wide distribution, cleanliness and non-pollution. Therefore, research on high-efficiency and low-cost solar cells has attracted worldwide attention. Among them, polycrystalline silicon solar cells have become the focus of industry research due to their high photoelectric conversion efficiency of 20.3% and low cost, and research on solar-grade polycrystalline silicon is in full swing. [0003] US 6090361 discloses a method for the preparation of purified silicon for solar cells, which involves reducing molten silicon oxide with carbon to obtain metallurgical grade silicon, then pouring the molten metallurgical grade silicon into a mold for directional solidification to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B28/04C30B29/06B22D11/00
Inventor 丁显波
Owner BYD CO LTD
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