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Method of fabricating a hybrid substrate

A hybrid base and substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems that do not specifically involve surface preparation

Active Publication Date: 2009-10-28
S O I TEC SILICON ON INSULATOR THECHNOLOGIES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, the document is not specifically concerned with surface preparations that allow good direct binding

Method used

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  • Method of fabricating a hybrid substrate
  • Method of fabricating a hybrid substrate
  • Method of fabricating a hybrid substrate

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0093] to slightly less than 1×10 17 he + / cm 2 dose and implantation energy of 50keV for the coated silicon dioxide (SiO 2 ) layer of (110) Si silicon substrate for helium ions (He + ) injection.

[0094]The resulting silica, SiO 2 remove.

[0095] This silicon donor substrate and an acceptor substrate also made of silicon (but with a (100) crystalline orientation) were then subjected to a reaction at a temperature of 1050° C. for about 4 minutes in an atmosphere containing hydrogen and argon. Slices were pre-bonded for preparation.

[0096] The two substrates 1 and 2 were then bonded together through their respective front faces, and subjected to a heat treatment at 1100° C. for 2 hours to strengthen the bond.

[0097] Finally, the donor substrate is separated from the rest purely mechanically by inserting a blade.

[0098] Thereby silicon / silicon DSB type substrates can be obtained.

[0099] The product thus has the very high-quality bonding interface necessary for...

Embodiment 2

[0101] coated with silicon dioxide (SiO 2 ) layer (100) Si silicon substrate for hydrogen / fluorine co-implantation. Take about 1 x 10 15 f + / cm 2 The dosage and the implantation energy of 180keV are used to implant fluorine, while the 16 h + / cm 2 The dosage and the injection energy of 30keV are used to inject hydrogen.

[0102] The resulting silica, SiO 2 remove.

[0103] This silicon donor substrate and the acceptor substrate made of polycrystalline silicon carbide (pSiC) were subsequently subjected to a prebonding preparation treatment at a temperature of 800° C. for about 5 minutes in a hydrogen-containing gas atmosphere.

[0104] The two substrates 1 and 2 were bonded together through their respective front faces, and subjected to heat treatment at 1000° C. for 3 hours to strengthen the bonding.

[0105] Finally, the donor substrate is separated from the rest purely mechanically by injecting a fluid jet.

[0106] Substrates of the SopSiC (Silicon on Polycrystal...

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PUM

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Abstract

The invention relates to a method of fabricating a hybrid substrate comprising at least two layers of crystalline material that are bonded directly to each other. This method is noteworthy in that it comprises steps consisting in: implanting at least one category of atomic and / or ionic species into a donor substrate so as to form therein a weakened zone forming the boundary between an active layer and a remainder; subjecting the front faces of the donor substrate and of a receiver substrate, to a heat treatment between 900 DEG C and 1200 DEG C, under hydrogen and / or argon for a time of at least 30 seconds; bonding said front faces to each other; detaching said remainder; the nature, implantation dose and implantation energy of said species being chosen so that the defects induced by these species within the donor substrate allow the remainder of the donor substrate to be subsequently detached but do not develop sufficiently during said heat treatment to prevent the subsequent bonding or to deform the front face of the donor substrate.

Description

technical field [0001] The present invention relates to a method of manufacturing a hybrid substrate comprising at least two layers of crystalline material bonded together by direct bonding. Background technique [0002] Substrates of this type can be used in the fields of optics, electronics or optoelectronics, which terms generally also include microelectronics, nanoelectronics, optomicroelectronics, optonanoelectronics and component technology. [0003] The above two layers of materials may have the same or different properties, the term "properties" encompassing both the chemical properties of the materials as well as their physicochemical properties and / or their crystallographic orientation. [0004] The term "direct bonding" of two layers or two substrates refers to molecular bonding without an intermediate layer, such as an adhesive layer. [0005] Among these hybrid substrates are substrates formed by DSB (acronym for Direct Silicon Bonding) known to those skilled i...

Claims

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Application Information

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IPC IPC(8): H01L21/18H01L21/265
CPCH01L21/2007H01L21/76254H01L21/187H01L21/18H01L21/265
Inventor 康斯坦丁·布德尔
Owner S O I TEC SILICON ON INSULATOR THECHNOLOGIES