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Storage unit structure for realizing multilevel storage and manufacture method thereof

A memory cell, phase change storage technology, applied in electrical components and other directions, can solve problems such as element diffusion, and achieve the effect of increasing capacity

Active Publication Date: 2010-09-15
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the current reported literature, the reports on multi-level storage mainly focus on phase change storage, using different phase change materials to achieve multi-level storage, such as Japanese Journal of Applied Physics, Vol.46, L25 (2007), but the phase change Diffusion of elements between materials is easy

Method used

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  • Storage unit structure for realizing multilevel storage and manufacture method thereof
  • Storage unit structure for realizing multilevel storage and manufacture method thereof
  • Storage unit structure for realizing multilevel storage and manufacture method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1: Taking the formation of a W resistance-change oxide plug as an example, the structure and manufacturing method of the phase-change memory unit are described.

[0035] (1) Thermally grow 100nm thick SiO on Si substrate 1 2 Or use PECVD (Plasma Enhanced Chemical Vapor Deposition) to prepare 100nm thick SiN x dielectric film, then the SiO 2 or SiN x Utilize the method for magnetron sputtering or vapor deposition to prepare one deck of 200nm thick Al film as bottom electrode; ( figure 1 )

[0036] (2) Prepare 100nm-500nm thick SiO on the bottom electrode Al film by PECVD or sputtering method 2 medium layer; ( figure 1 )

[0037] (3) on SiO 2 The hole is prepared by electron beam exposure and reactive ion etching technology, the bottom of the hole is connected to the bottom electrode, and the diameter of the hole is in the range of 50nm-500nm; then the W material is filled in the hole by CVD or sputtering technology; finally, the chemical mechanical poli...

Embodiment 2

[0042] Example 2: Change the W plug thermal oxidation method in the fourth step of Example 1 to a plasma oxidation method, that is, use plasma oxidation to oxidize the top of the W plug to form WO x Plug, other with embodiment 1, can obtain similar result like this.

Embodiment 3

[0043] Embodiment 3: The GeSbTe thin film in step 5 in Embodiment 1 is replaced by SiSbTe thin film or other phase-change material thin film, and the others are the same as in Embodiment 1, and similar effects can also be achieved.

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Abstract

The invention provides a storage unit structure for realizing multilevel storage and a manufacture method thereof. The storage unit structure is characterized in that: the storage unit structure consists of a top electrode, multilevel storage media (a stack structure formed by a phase change material and a metal oxide plug such as WOx plug with a variable resistance characteristic), a variable resistance oxide plug, a bottom electrode, a substrate, an insulating medium, and the like, wherein the phase change material is a compound material enabling reversible phase change such as Ge-Sb-Te, andthe WOx plug is formed by the oxidation of a tungsten plug and has resistance value change under the action of an electric field (electric pulse). The multilevel storage is realized through the multilevel resistance value change of Ge-Sb-Te and the WOx plug so as to improve the capacity of each single storage unit.

Description

technical field [0001] The invention relates to a memory unit structure for realizing multi-level storage and a manufacturing method thereof, belonging to the field of nanometer devices and preparation techniques in microelectronics. Background technique [0002] Traditional storage technologies face many challenges, and the research and development of new storage technologies has attracted extensive attention from domestic and foreign research institutions and semiconductor companies. Among the current storage technologies, phase change memory (PCRAM) and resistive random access memory (RRAM) based on metal oxides with resistive switching characteristics are considered to be the next generation of storage technologies with commercial application prospects. . PCRAM has the advantages of small storage unit size, non-volatility, long cycle life, good stability, low power consumption, and strong embeddable functions, especially in the miniaturization of device feature size. Th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L45/00
Inventor 吴良才宋志棠
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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