Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Three-band pulsing laser

A pulsed laser and pulsed laser technology, applied in the laser field, can solve the problems of inability to be used for fine micromachining, low single pulse energy, low repetition frequency, etc., and achieve compact overall cavity design, high frequency doubling conversion efficiency, and reduce device damage. Effect

Inactive Publication Date: 2009-11-04
BEIJING GK LASER TECH
View PDF2 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In the prior art, there is a method of using a xenon lamp to pump laser crystals. The laser pulse width obtained by this method is relatively wide. For example, the application number is 00226888.4, and the utility model patent named "Laser irradiation device with three wavelengths and multiple working modes" The technical solution disclosed in the application has a pulse width of 200μs-10ms and a low repetition frequency, so it cannot be used for fine micromachining
In the prior art, there is also a UV laser that uses semiconductor pumping and acousto-optic Q-switching. For example, the application number is 200410073574.8, and the Chinese invention patent application named "Laser Diode Pumped All-Solid-State UV Laser" uses a cavity Type design, wide pulse width, low single pulse energy

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Three-band pulsing laser
  • Three-band pulsing laser
  • Three-band pulsing laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] like figure 1 As shown, the three-band pulsed laser according to Embodiment 1 of the present invention includes: a pulsed laser seed source, a laser amplification device and a three-band output device.

[0033] The pulsed laser seed source includes a first LD (laser diode) pump source 1, a first plane mirror 2, a first laser crystal 3, a polarizer 4, a first 1 / 4 wave plate 5, an electro-optic Q switch 6, and a second plane mirror 7 (total reflection plane mirror). The first LD pumping source 1 comprises a pulse LD, an optical fiber and an optical fiber coupled output head ( figure 1 The pulse LD is not shown in the figure, only the optical fiber and the fiber coupling output head that lead out the pump light emitted by the pulse LD are shown, and the fiber coupling output head can shape the pump light), the light output surface of the fiber coupling output head Anti-reflection film of pump light wavelength (808nm) is plated; one side of the first plane mirror 2 facing...

Embodiment 2

[0041] Figure 5 Represent the schematic diagram of the pulsed laser according to embodiment 2 of the present invention, its structure is similar to embodiment 1, only the laser amplifying device in the present embodiment is a one-way amplifying device, has omitted the second 1 / 4 wave plate 8, and has adopted A third plane mirror 18 is used instead of the third plane mirror 10 in Embodiment 1. The angle between the third flat mirror 18 and the horizontal direction is approximately 45°, which is placed between the second LD pump source 11 and the second laser crystal 9 of the laser amplifying device, for receiving the seed laser and reflecting it to the second Laser crystal 9; and its one side facing the polarizer 4 is coated with an anti-reflection film for the wavelength of pump light, and the other side is coated with an anti-reflection film for the wavelength of pump light and a high-reflection film for the wavelength of the seed light (that is, the fundamental frequency la...

Embodiment 3

[0044] Image 6 A schematic diagram showing a pulsed laser according to Example 3 of the present invention. As shown in the figure, its structure is substantially the same as that of Embodiment 2, except that the axial direction of the laser amplifying device forms an included angle of 33° with the polarizer 4, and the third plane mirror 18 forms an included angle of 57° with the axis of the three-band output device, so that The seed laser light emitted from the polarizer 4 is amplified by the second laser crystal 9 and then reflected by the third plane mirror 18 to the focusing mirror 12 .

[0045] The invention injects seed light into the laser amplifying device, thereby reducing damage to the laser seed source part (not amplifying in the cavity of the pulse laser seed source) while realizing high energy output. The frequency doubling conversion efficiency is directly related to the power density of the fundamental frequency laser to a certain extent, and the pulse width of...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a three-band pulsing laser, comprising a pulsed laser seed source, a laser amplifying device and a three-band output device; wherein the pulsed laser seed source is used for generating seed laser, the laser amplifying device is used for receiving and amplifying the seed laser to obtain fundamental laser; the three-band output device is used for frequency doubling on the fundamental laser and for frequency doubling on the frequency-doubled laser again to obtain fourfold laser, and the remanent fundamental laser, the remanent frequency-doubled laser and the obtained fourfold laser are output by the method of beam splitting. The invention realizes three-band output, and the cavity structure can ensure high energy and narrow pulse width three-band laser output and also can reduce element damage. Besides, the structure of the invention is simple and compact, installation and debugging is easy, and industrialized design can be realized.

Description

technical field [0001] The invention relates to the field of lasers, in particular to a three-band pulse laser. Background technique [0002] Lasers are more and more widely used in industrial processing, especially ultraviolet lasers. Due to the short wavelength of ultraviolet lasers produced by them, they can directly destroy the chemical bonds connecting the atomic components of substances without generating heat. Shows great advantages in fine processing. At the same time, it is also widely used in the fields of optical data storage, photolithography, optical disc control, microfabrication, atmospheric detection, microelectronics, photochemistry, photobiology and medical treatment. And at present, the demand for three-band lasers for microfabrication has greatly increased. In engineering applications, the requirements for component damage resistance, device reliability, stability, engineering, assemblability, multi-functionality, and convenient operation of this three-...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/091H01S3/0941H01S3/10H01S3/109
Inventor 樊仲维王培峰麻云凤张国新张晶牛岗
Owner BEIJING GK LASER TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com