Crucible for growing polysilicon ingot
A technology for growing polycrystals and crucibles, which is applied in crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of low conversion efficiency of solar cells, poor directional impurity removal effect, low minority carrier life, etc., to reduce the grain boundary The effect of increasing the number and conversion efficiency and increasing the minority carrier lifetime
Inactive Publication Date: 2009-12-09
JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD
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Problems solved by technology
Due to the flat bottom and uniform temperature, disordered spontaneous nucleation leads to the formation of many crystal grains, the crystal orientation ...
Method used
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Embodiment 1
[0041] Embodiment 1. A crucible for growing polycrystalline silicon ingots, wherein: a bottom plate 2 of the crucible is provided with a plurality of holes 3 .
Embodiment 2
[0042] Embodiment 2. A crucible for growing polycrystalline silicon ingots, wherein: the depth of the hole 3 is 0.1 mm. All the other are with embodiment 1.
Embodiment 3
[0043] Embodiment 3. A crucible for growing polycrystalline silicon ingots, wherein the depth of the hole 3 is 0.5. All the other are with embodiment 1.
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Abstract
The invention relates to a crucible for growing silicon ingot in the field of solar energy, in particular to a crucible for growing polysilicon ingot. The crucible for growing the polysilicon ingot is characterized in that: a bottom plate 2 of the crucible is provided with a plurality of holes 3; and the depth of the holes 3 is 1 to 25 mm, the aperture of the level part of the holes 3 and the bottom plate 2 of the crucible is 1 to 30 mm, and the distributed density of the holes 3 and the bottom plate 2 of the crucible is 1 to 100 per square decimeter. By adopting the crucible for growing the polysilicon ingot to grow polysilicon ingot, the directionality of crystal grains of the polysilicon ingot can be remarkably improved, crystal grains of the polysilicon ingot predominate in and crystal orientation, multiple parallel twins boundaries caused by crystal face are reduced, the number of crystal boundaries is reduced, and simultaneously the percentage of sigma 3 shallow energy level crystal boundary is improved so as to effectively prolong the minority carrier lifetime of a silicon chip, and the conversion efficiency of solar cells made of the silicon chip is improved.
Description
technical field [0001] The invention relates to a crucible for growing silicon ingots in the field of solar energy, in particular to a crucible for growing polycrystalline silicon ingots. Background technique [0002] The current casting of polysilicon is generally carried out by directional solidification. Generally, a square crucible with a flat bottom consisting of a bottom surface and a side wall that defines the internal volume is used. A certain temperature gradient is formed at the bottom of the crucible by using processes such as lowering the crucible, raising the heat insulation cage, and water-cooling the crucible. The bottom plate gradually nucleates and grows. Due to the flat bottom and uniform temperature, disordered spontaneous nucleation leads to the formation of many crystal grains, the crystal orientation is chaotic, the directional impurity removal effect is poor, the minority carrier lifetime is low, and the conversion efficiency of the final solar cell i...
Claims
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IPC IPC(8): C30B28/06C30B29/06
Inventor 胡动力张涛王人松
Owner JIANGXI SAI WEI LDK SOLAR HI TECH CO LTD
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