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Oxide multilayered gradient film and RRAM component structured thereby

An oxide film, oxide technology, applied in electrical components, layered products, etc., can solve problems such as difficult to meet practical applications, reduce initialization voltage, etc., achieve excellent transition and memory characteristics, high stability and retention, High retention effect

Inactive Publication Date: 2010-01-06
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

And the initialization voltage V of the double-layer (N=2) titanium oxide film forming Usually above 10V, it is difficult to meet the practical application, so reducing the initialization voltage is a problem that needs to be solved

Method used

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  • Oxide multilayered gradient film and RRAM component structured thereby
  • Oxide multilayered gradient film and RRAM component structured thereby
  • Oxide multilayered gradient film and RRAM component structured thereby

Examples

Experimental program
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Effect test

Embodiment 1

[0025] Embodiment 1. Preparation process of titanium oxide RRAM components

[0026] Choose Pt as the bottom electrode and top electrode layer; choose TiO 2 The gradient film is a resistive oxide layer, and the titanium oxide gradient film RRAM component is prepared, which is characterized in that: a Pt bottom electrode layer 2 is sequentially deposited on the substrate 1, and the middle resistive layer TiO 2 Gradient film 3, Pt top electrode 4. The specific process steps are as follows:

[0027] 1) A Pt bottom electrode 2 is prepared on the Si substrate 1 by a magnetron sputtering process, and the thickness of the Pt electrode is 100-200 nm. Of which SiO 2 It is the natural oxide layer on the surface of single crystal Si, Ti is Pt and SiO 2 The bonding layer between.

[0028] 2) Deposition of TiO by pulsed laser deposition (PLD) 2 Gradient film 3, using TiO 2 Ceramic target, the background vacuum is less than 4×10 -4 Pa, layered deposition of TiO with different oxygen content 2 Grad...

Embodiment 2

[0031] Example 2. N=3 and N=6 TiO 2 Preparation of gradient film

[0032] Theoretically assume TiO 2 The number of layers of the gradient film is N, and the bottom layer near the bottom electrode is TiO 2-δ Thin film, in which the concentration of oxygen vacancies is δ; from bottom to top, the concentration of oxygen vacancies is reduced layer by layer with a step length of δ / (N-1), and after reaching the top layer, it becomes a stoichiometric TiO 2 Film, see attached figure 2 . Attached image 3 Give TiO 2 Two examples of theoretical schematic diagrams of gradient films: the number of layers N=3 and N=6. Theoretically, N can tend to infinity, that is, the gradient film is designed as TiO with continuously changing oxygen vacancies 2 film.

[0033] Use PLD deposition method to deposit TiO 2 Gradient film. In the experiment, first the Pt / Ti / SiO produced in the process step 1) of Example 1 2 The temperature of / Si is controlled within the range of room temperature to 700℃, the pu...

Embodiment 3

[0034] Example 3, N=3 and N=6 TiO 2 Resistance switching properties of gradient films

[0035] N=3 TiO 2 The resistance transition process of gradient film components can be described as: the film is initially in a high resistance state, Image 6 a is the initial I-V curve, and the voltage sweep range is ±1V, showing a significant junction effect: conduction in the positive direction and cut-off in the negative direction, indicating Pt / TiO 2 The Schottky knot on the upper interface plays a major role. Apply negative voltage to a certain value (V forming ~7.4V), the film transforms into a low resistance state, the so-called forming process is like Image 6 Shown in b. Then apply the forward voltage to a certain value (V set ), the film returns to a high resistance state; then a negative voltage is applied to a certain value (V reset ), the film transforms into a low-resistance state, which is a cycle, Image 6 In c is the I-V curve of 2 cycles, which shows that its repeatability ...

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Abstract

The invention provides an oxide multilayered gradient film for resistance-type random-access memory (RRAM) components. The oxide multilayered gradient film has the characteristic of resistance transition, and the formation general formula of the film is: MO<x- delta > / MO<x- delta (N-2) / (N-1)> / ... / MO<x- delta / (N-1)> / MO x, wherein in the formula, MO x is a binary or multiple oxide, N is the total layer number of the oxide multilayered gradient film, and N is not smaller than 3; delta is oxygen vacancy content of the oxide film at the bottom layer, and delta is not smaller than 1 but smaller than x; and the MO x is TiO 2, ZnO, MgO, Al 2 O 3 or SrTiO 3. In an RRAM component structured by the oxide multilayered gradient film, the oxide multilayered gradient film with different layers (N is not smaller than 3) can realize the characteristics of reversible resistance transition and memorization. With the increasing of the layer number N, initialized voltage reduces gradually. The high resistance value reaches the magnitude of M omega, while the low resistance value is 10 ohms, and the ratio of the high resistance to the low resistance reaches 10<2> to 10 <5>. Under the continuous voltage scanning and excitation, the oxide multilayered gradient film shows excellent and stable characteristics of high-low resistance transition and memorization.

Description

Technical field [0001] The invention relates to a type of oxide multilayer gradient film with resistance transition characteristics and RRAM components constructed thereof. The prepared oxide gradient film material can realize reversible resistance transition. It belongs to the field of oxide information functional materials. Background technique [0002] Since the University of Houston in the United States first reported the discovery of the electrical pulse-triggered resistance-change (EPIR: Electrical pulse induced resistance-change) effect in manganese oxide thin films in 2000, the development of new resistive random access memory (RRAM) based on this effect has been highly affected. attention. Compared with other types of RAM, this kind of memory has the advantages of high access speed, low power consumption, non-destructive readout, and radiation resistance. It is expected to be a new generation of non-volatile memory that will completely replace current market products. ...

Claims

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Application Information

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IPC IPC(8): H01L45/00B32B9/00
Inventor 李效民刘新军王群曹逊杨蕊于伟东陈立东
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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