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High voltage multi-threshold MOSFET device

A multi-threshold, high-voltage technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as complex processes, achieve low cost, simple manufacturing process, and easy to achieve the effect of change

Active Publication Date: 2011-07-06
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Those skilled in the art know that in the above-mentioned doping step, the process is relatively complicated, and additional masks need to be added

Method used

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Embodiment Construction

[0030] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0031] image 3 Shown is a top view of the multi-threshold high-voltage MOSFET device structure of the first embodiment of the present invention, Figure 4 Shown is a cross-sectional view of the multi-threshold high-voltage MOSFET device structure of the first embodiment of the present invention, and the cross-sectional view is image 3 The cross-section at A-A in the middle. In this embodiment, we define the working voltage greater than or equal to 12 volts as "high voltage". Such as image 3 , Figure 4 As shown, the multi-threshold high-voltage MOSFET device 300 includes a gate electrode, a gate dielectric layer 340, a source (Source) 320, a drain (Drain) 330, an offset region 370, and a semiconductor substrate 310, and an N-type multi-threshold high-voltag...

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Abstract

The invention provides a high voltage multi-threshold MOSFET device, and belongs to the technical field of metal oxide semiconductor field-effect transistors. The high voltage multi-threshold MOSFET device comprises a gate electrode, a gate dielectric layer, a source electrode, a drain electrode, a deviation region and a semiconductor substrate, the gate electrode is composed on the gate dielectric layer, the area ratio of the gate dielectric layer uncovered by the gate electrode to the gate dielectric layer covered by the gate electrode is modified by composition of the gate electrode so as to change unit-area capacitance Cox, thus adjusting threshold voltage of the high voltage multi-threshold MOSFET. The high voltage multi-threshold MOSFET device is characterized by easily changing thethreshold voltage, and composition difference of the gate electrode of the high voltage multi-threshold MOSFET can be realized on the same mask, and can be completed in the same etching in the composition process of the gate electrode of a plurality of high voltage multi-threshold MOSFETs. The high voltage multi-threshold MOSFET device has the advantages of simple process and low cost.

Description

technical field [0001] The invention belongs to the technical field of metal oxide semiconductor field effect transistor (Metal-Oxide-Semiconductor-Field-Effect-Transistor, MOSFET), in particular to a multi-threshold (Multi-Vt) high voltage (High Voltage, HV) MOSFET device, especially It relates to a multi-threshold high-voltage MOSFET device capable of realizing multi-threshold characteristics by patterning and modifying the pattern of the gate electrode. Background technique [0002] MOSFET is one of the basic components in integrated circuits, and its basic physical principles have been well known by industry technicians. The formula for calculating the threshold voltage (Vth) of the MOSFET is listed in the following formula (1). [0003] [0004] In formula (1), Vth is the threshold voltage, Ψ FB is the flat-band voltage, is the Fermi potential, N A Is the channel doping concentration (this formula is the calculation formula of NMOSFET), ε is the dielectric const...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/51H01L29/423H01L29/06H01L21/336
Inventor 黎坡张拥华周建华彭树根
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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