Combined luminous element of electronic barrier layer

Abstract

The invention discloses a combined luminous element of an electronic barrier layer, which can be provided with an active luminous layer, an n-type gallium nitride layer, a p-type gallium nitride layer, and two III-V semiconductor layers with different energy gaps, wherein the semiconductor layers are periodically and repeatedly deposited on the active luminous layer as the electronic barrier layerwith higher potential barrier to obstruct excessive electronic active luminous layers. The combined luminous element can realize obstruction of electronic overflow through the electronic barrier layer to increase the composite probability of electrons and holes in the active luminous layer and discharge photons, and provides stress compensation through the combination of the III-V semiconductor layers with different crystal lattice sizes to reduce the accumulation of stress between the luminous element and the active luminous layer.

Description

technical field [0001] The invention relates to an electronic product, in particular to a light emitting element. Background technique [0002] During the operation of the light-emitting element, the phenomenon of electron overflow will not only reduce the luminous efficiency of the element, but also cause a rise in temperature and affect the service life of the element. Therefore, how to effectively reduce electron overflow is a very important link when manufacturing light-emitting elements. [0003] figure 1 A schematic cross-sectional view of a conventional light-emitting element using a gallium nitride-based semiconductor is shown. see figure 1 , a conventional light-emitting element has an n-type GaN layer 102 , an active light-emitting layer 112 , and a p-type GaN layer 122 . [0004] figure 2 show the basis figure 1 The energy diagram of the energy gap of each layer. in, figure 2 Depicted above, is the path energy taken by the electron. figure 2 Depicted b...

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Problems solved by technology

In addition, the higher the aluminum content, the worse the lattice quality, and it is relatively difficult to increase the hole concentration of AlGaN

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