Source voltage regulation method capable of reducing aging of integrated circuit and reducing leakage power consumption simultaneously

Abstract

The invention relates to a source voltage regulation method capable of reducing aging of integrated circuit and reducing leakage power consumption simultaneously, belonging to the technical field of integrated circuit designing. The method is characterized in that a dual source voltage of circuit is dynamically regulated according to the time delay and leakage power consumption of circuit during the operation of circuit by using high and low dual source voltages in integrated circuit so that the performance parameters of the circuit accurately meet the requirement and the purposes of reducingcircuit aging and reducing leakage power consumption simultaneously are achieved.

Description

technical field [0001] The invention relates to a power supply voltage adjustment method for reducing integrated circuit aging and leakage power consumption, and belongs to the technical field of integrated circuit design. Background technique [0002] With the continuous reduction of the feature size of CMOS technology, an aging mechanism called Negative Bias Temperature Instability (NBTI) has gradually become one of the most important factors affecting the reliability of digital integrated circuits. NBTI is an effect specific to PMOS transistors, and the NBTI effect occurs when the PMOS transistor is in a reverse bias condition. [0003] In the manufacturing process of integrated circuits, when silicon is oxidized, hydrogen atoms must be introduced due to the process, so in addition to forming the usual silicon-oxygen (Si-O) bond in the oxide, a part of silicon will also be formed - Hydrogen (Si-H) bonds, which are weaker than Si-O bonds. When the PMOS transistor is nega...

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But there is also leakage power when the circuit is running

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