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Organic electroluminescent device capable of forming spin-polarized injection

An electroluminescent device and spin-polarized technology, which is applied in the direction of electric solid-state devices, electrical components, semiconductor devices, etc., can solve the problems that cannot be broken and limit the external quantum efficiency of the device, and achieve the improvement of luminous brightness and current efficiency, The effect of increasing the scale

Inactive Publication Date: 2010-03-03
JILIN UNIV
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  • Abstract
  • Description
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  • Application Information

AI Technical Summary

Problems solved by technology

In fluorescent light-emitting devices, usually only singlet excitons radiate and recombine to emit light, while the formation ratio of singlet and triplet excitons is 1:3, that is, the ratio of singlet excitons is only 25%, which limits the external quantum of the device. efficiency improvement
Although the efficiency of the device can be improved to a certain extent from various aspects such as the material of the device, the interface barrier, and the balance of carrier injection, it cannot break the limitation of this theory in fluorescence luminescence.

Method used

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  • Organic electroluminescent device capable of forming spin-polarized injection
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  • Organic electroluminescent device capable of forming spin-polarized injection

Examples

Experimental program
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Effect test

Embodiment 1

[0037] Based on Fe 3 o 4 Research and test of spin-polarized magnetic field effect of doped hole transport layer NPB device, device structure ITO / NPB: Fe 3 o 4 (doping ratio is 2:1, 25nm) / NPB(15nm) / Alq 3 (50nm) / LiF(1nm) / Al(100nm), such as figure 1 As shown in the device structure II, the comparison structure is ITO / NPB(40nm) / Alq 3 (50nm) / LiF(1nm) / Al.

[0038] The ITO glass substrate was scrubbed with acetone cotton ball and ethanol cotton ball in turn, and then ultrasonicated with acetone solution, ethanol solution, and deionized water for 10 minutes, and then on the cleaned ITO glass substrate, the multi-source organic molecular beam Each functional layer is grown sequentially in the deposition system, and the vacuum degree of the system is maintained at 4×10 -4 Around Pa, the hole transport layer uses dopant Fe 3 o 4 The method of co-evaporating with the host material NPB, that is, the dopant and the host material are evaporated and deposited on the substrate at the ...

Embodiment 2

[0044] Based on Fe 3 o 4 Test and analysis of the spin-polarized magnetic field effect of a blue-light organic electroluminescence device as an anode buffer layer. Device structure such as figure 1 As shown in the device structure III in , 002 uses ITO, and 003 uses Fe with high spin polarizability 3 o 4 , NPB is selected for 004, Bphen is selected for 005, LiF / AL is selected for 006, and the specific structural parameters are as follows: ITO / Fe 3 o 4 / NPB(30nm) / Bphen(60nm) / LiF(1nm) / AL(100nm), the contrast structure is ITO / NPB(30nm) / Bphen(60nm) / LiF(1nm) / AL(100nm), in which NPB is used as the luminescent layer, Bphen is a hole blocking layer and also serves as an electron transport layer, which can effectively confine the injected carriers in the light-emitting layer for composite light emission, and the anode buffer layer Fe 3 o 4 The thickness of the device varies from 0nm to 10nm, and the preparation method of the device is the same as in Example 1. The test method i...

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Abstract

The invention belongs to the technical field of organic electroluminescence and particularly relates to an organic electroluminescent device capable of forming spin-polarized injection by introducingtransition metal oxides. The structure of the device comprises an anode, an organic function layer and a cathode, wherein the organic function layer is a cavity injection layer or a cavity transmission layer, a luminescent layer and an electronic transmission layer; the cavity injection layer or the cavity transmission layer is partly doped; the doped material is Fe3O4; the volume ratio of the doped material and the main material is 1:4-2:1; alternatively, the structure of the device comprises a substrate, an anode, an anode cushioning layer Fe3O4, a luminescent layer, a cavity blocking layerand a cathode. The device can form spin-polarized injection under the action of an external magnetic field. The cavity injected from the anode is spin-polarized when passing the anode cushioning layeror the doped layer, the spin regulation on the carrier is realized, and the proportion of singlet exciton formed in the device is increased, so that the luminescent brightness and current efficiencyof the device are obviously improved.

Description

technical field [0001] The invention belongs to the technical field of organic electroluminescence, and in particular relates to an organic electroluminescence device which introduces a magnetic transition group metal oxide and can form spin polarization injection. technical background [0002] The 21st century is an era of rapid development of information technology. With the popularization of digital multimedia technology and Internet technology, people have higher and higher requirements for display technology. Display technology has become an indispensable link in order to transmit a large amount of information to others in a timely and accurate manner. Therefore, as a terminal display of information products, it occupies an increasingly important position. However, the existing displays cannot keep up with the development of science and technology, and people urgently need higher-performance flat panel display devices (FPDs). [0003] FPD is the main development direct...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54G01R31/26G01M11/02
Inventor 孙洪波冯晶张丹丹
Owner JILIN UNIV
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