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Method for making novel aluminum nitride ceramic carrier inclined end face for semiconductor laser

A technology of aluminum nitride ceramics and inclined end faces, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., and can solve problems such as difficult operation and low precision

Active Publication Date: 2011-07-20
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
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  • Application Information

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Problems solved by technology

[0005] Aiming at the above-mentioned problems in the prior art that the production of the inclined end face of the new aluminum nitride ceramic carrier for micron-scale semiconductor lasers is difficult to operate and the precision is not high, the present invention provides a semiconductor with simple processing technology, high efficiency, good consistency and low cost. Fabrication method of inclined end face of new aluminum nitride ceramic carrier for laser

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  • Method for making novel aluminum nitride ceramic carrier inclined end face for semiconductor laser
  • Method for making novel aluminum nitride ceramic carrier inclined end face for semiconductor laser
  • Method for making novel aluminum nitride ceramic carrier inclined end face for semiconductor laser

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Embodiment Construction

[0023] In order to make the above objects, features and advantages of the present invention more obvious and understandable, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings and specific implementation methods in the embodiments of the present invention. Obviously, The described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0024] see Figure 1-1 to Figure 1-3 , a method for manufacturing a novel aluminum nitride ceramic carrier inclined end face for semiconductor lasers, the method includes the following steps:

[0025] ①According to the design specifications, the aluminum nitride ceramic sheet is processed into a cuboid ceramic sheet;

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Abstract

The invention relates to a method for making a novel aluminum nitride ceramic carrier inclined end face for a semiconductor laser. In the method, a diamond tool is mainly used to process a V-shaped groove to a pre-determined depth on an aluminum nitride ceramic chip; then a reserved bottom surface is made into an inclined end face that accords with the requirements by using a thinning method. Themethod has simple and easy implementation, low cost, high processing efficiency and good consistency. A miniature carrier with the thickness less than 100 microns can be made after the inclined end face and the plane are used for performing the electrode interconnection by using the aluminum nitride ceramic chip that is produced by the technology. The invention can be applied to the high density packaging of a device or an assembly, and realize the electric drive or information transmission by using a pluggable interface.

Description

technical field [0001] The invention relates to a method for manufacturing a semiconductor device, in particular to a method for manufacturing an inclined end face of an aluminum nitride ceramic carrier, and more specifically, the invention relates to a method for manufacturing an inclined end face of a novel aluminum nitride ceramic carrier for semiconductor lasers. Background technique [0002] With the continuous development of computer technology, computer storage media is required to develop in the direction of small volume and large capacity. The minimum storage unit area of ​​magnetic materials is inversely proportional to temperature. Therefore, in order to improve the storage capacity of the next generation computer hard disk, magnetic storage materials will be used to scan Heating technology to increase storage capacity. In order to achieve disk laser scanning heating, it is necessary to realize high-density packaging of small-sized semiconductor lasers, in which t...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/024H01S5/022
Inventor 常慧增张世祖
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP