Methods for stripping material for wafer reclamation

A technology of composition and surfactant, applied in the direction of photosensitive material processing, chemical instruments and methods, drilling composition, etc., can solve the problems that the incineration system cannot accept wastewater samples, damage the construction materials of the incinerator, etc.

Inactive Publication Date: 2010-03-24
ADVANCED TECH MATERIALS INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Disadvantageously, incineration systems cannot accept wastewater samples containing high fluoride concentrations because fluoride sources may damage the materials of construction of the incinerator

Method used

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  • Methods for stripping material for wafer reclamation
  • Methods for stripping material for wafer reclamation
  • Methods for stripping material for wafer reclamation

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0282] In order to make the removal composition comply with national and international environmental standards, the diethylene glycol butyl ether component (which is HAP) of the removal composition is replaced by a solvent not on the HAP list (especially propylene glycol, dipropylene glycol and its ether) . Each formulation included 20.1 wt% HF, 2.2 wt% sulfolane, 21.7 wt% non-HAP listed solvent and 56 wt% water, based on the total weight of the composition. Compositions are shown in Table 1 below along with specific non-HAP inventory solvents. In each case, at 50°C will include Black Diamond (hereinafter BD, thickness approx. ) or CORAL (thickness approx. ) were immersed in a volume of the composition for 5 minutes (unless otherwise stated) and visually inspected.

[0283] Table 1: Chemical Formulations Including Non-HAP Listed Organic Solvents

[0284] Non-HAP List Organic Solvents

[0285] The etch results indicated that formulation UU including dipropylene ...

Embodiment 2

[0287] Known to include oxidizing agents (such as H 2 o 2 ) removal compositions may be relatively unstable in the presence of certain organic components. Therefore, it is often necessary to add an oxidizing agent to the remaining components at the time of use, which may be inconvenient to the user. Therefore, the more stable oxidizing agent (rather than H 2 o 2 ) was experimentally determined to have Efficacy of copper removal for blanketed wafers of 1000 mm thickness where the wafers were immersed in the solutions of Table 2 at room temperature or at 40 °C and visually inspected.

[0288] Table 2: Copper removal using various oxidizing agents

[0289] oxidizing agent

[0290] It can be seen that the order of etching rate effect is H 2 o 2 2 o 2 (or with H 2 o 2 together), depending on the needs of the user and the effect of various oxidizing agents on the materials on the structure of the microelectronic device.

Embodiment 3

[0292] Blanketed polysilicon was immersed in green formulations of the invention (G1-G4) and the polysilicon etch rate of the green formulations was determined compared to that observed for formulation CC (ie, non-green formulations). min -1 for about min -1 . Furthermore, it should be noted that the COD of the green formulation is about 60 times lower than that of the formulation CC.

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Abstract

Removal compositions and processes for removing at least one material layer from a rejected microelectronic device structure having same thereon. The removal composition includes hydrofluoric acid. The composition achieves substantial removal of the material(s) to be removed while not damaging the layers to be retained, for reclaiming, reworking, recycling and / or reuse of said structure.

Description

technical field [0001] The present invention generally relates to methods suitable for removing layers of materials from substrates or articles having materials such as low-k dielectrics, to regenerate, reprocess, recycle and / or reuse such substrates or articles, and to product. Background technique [0002] The need for increasing performance associated with high density, ultra large scale integration (ULSI) semiconductor wiring has increasingly required the use of low dielectric constant (low k) insulating layers to increase signal transmission speed while reducing device size. [0003] Typical low-k materials include: (for example) using the proprietary BLACK DIAMOND TM method using a method such as SiLK TM 、AURORA TM 、CORAL TM or BLACK DIAMOND TM Carbon-doped oxide (CDO) deposited from commercially available precursors. The CDO is typically formed from organosilanes and organosiloxane precursors using chemical vapor deposition (CVD). CVD carbon-doped oxide low-k d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42C09K8/02H01L21/027
CPCH01L21/32134H01L21/02079C11D3/3454H01L21/31111C11D3/046H01L21/31133C11D11/0041C23F1/16C11D3/042C11D3/3947C11D1/29C11D1/004G03F7/423
Inventor 江平迈克尔·B·克赞斯基大卫·W·明赛克
Owner ADVANCED TECH MATERIALS INC
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