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Method for preparing InSb superlattice nano line

A nanowire and superlattice technology, applied in nanostructure manufacturing, nanotechnology, nanotechnology, etc., to achieve the effects of easy promotion, easy control of pore size, and simple preparation methods

Inactive Publication Date: 2013-02-13
HEFEI UNIV OF TECH
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Problems solved by technology

Compared with the extensive research on various heterogeneous material superlattices, the preparation method of InSb-like homogeneous material superlattice nanowires has not been publicly reported.

Method used

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  • Method for preparing InSb superlattice nano line
  • Method for preparing InSb superlattice nano line
  • Method for preparing InSb superlattice nano line

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Experimental program
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Embodiment Construction

[0024] 1. Preparation of porous alumina template: the porous alumina template was prepared in an oxalic acid solution with a molar concentration of 0.3M by the secondary anodic oxidation method, the oxidation voltage was 40V, and an alumina template with a pore diameter of 60nm and a thickness of 40μm was obtained; A 200nm-thick Au film was deposited on the opposite side of the alumina template by vapor deposition as the cathode.

[0025] 2. Prepare the electrolyte: first prepare the electrolyte containing H 2 C 6 h 5 o 7 and Na 3 h 2 C 6 h 5 o 7 buffered aqueous solution, the solution H 2 C 6 h 5 o 7 、Na 3 h 2 C 6 h 5 o 7 The concentrations are 4g / 100ml and 4.48g / 100ml respectively, and then add InCl 3 4H 2 O and SbCl 3 , its addition amount is respectively 1.76g / 100ml and 1.00g / ml, stirs 3 hours with magnetic stirrer, the pH value of solution is measured by H 2 SO 4 Adjust to 2.2.

[0026] 3. Deposition device: A computer-controlled dual-electrode depos...

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Abstract

The invention discloses a method for preparing an InSb superlattice nano line, which is characterized by preparing the InSb / InxSb1-x(x=0.2-0.6) superlattice nano line on an aluminum oxide template with uniform holes by a pulse electrochemical deposition method. The preparation method is simple, has convenient control operation and is easy for popularization.

Description

technical field [0001] The invention relates to a compound semiconductor nanomaterial and its preparation method, in particular to the controllable preparation of indium antimonide superlattice InSb / In by pulse electrodeposition x Sb 1-x (x = 0.2-0.6) Nanowire array approach. Background technique [0002] In the 21st century full of vitality, the rapid development of information, biotechnology, energy, environment, advanced manufacturing technology and national defense will inevitably put forward new requirements for materials, such as miniaturization, intelligence, high integration, high-density storage and ultra-fast transmission of components and so on promote the research of materials to develop in the direction of smaller size. With the development of nanotechnology, people have been able to prepare various low-dimensional mesoscopic structures such as quantum wires, quantum wells, and superlattices. In these mesoscopic structures, because the coherence length of the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B82B3/00
Inventor 杨友文陈东陈延彪陈祥迎解挺
Owner HEFEI UNIV OF TECH
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