White organic luminescent element and preparation method thereof
A technology of organic light-emitting device and blue light-emitting material, applied in the field of white organic electroluminescent device and its preparation, can solve the comprehensive problem of low color recovery coefficient of device, color recovery coefficient, luminous efficiency and brightness of white organic electroluminescent device The performance has not been substantially improved, the coverage is insufficient, etc., to achieve the effect of optimizing the design, improving the color recovery coefficient, improving the efficiency and brightness
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[0056] The present invention also provides a method for preparing a white organic light-emitting device, which is characterized in that it includes:
[0057] forming indium tin oxide on the substrate as an anode;
[0058] subjecting the indium tin oxide to low-pressure oxygen plasma treatment;
[0059] When the vacuum degree reaches 1~3×10 -5 At the same time, a hole transport layer, a hole confinement layer and an electron transport layer are sequentially evaporated on the indium tin oxide treated with low-pressure oxygen plasma, and the hole transport layer includes 0.1wt% to 0.4wt% organic electron transport materials and 99.6wt% to 99.9wt% of organic blue light emitting materials, the electron transport layer includes 99.8wt% to 99.9wt% of organic electron transport materials and 0.1wt% to 0.2wt% of organic red light emitting materials, the The organic electron transport material is 8-hydroxyquinoline aluminum;
[0060] The indium tin oxide on which the above-mentioned ...
Embodiment 1
[0079] First, chemically etch the ITO anode layer on the ITO glass into strip electrodes with a width of 10 mm and a length of 30 mm;
[0080] Then use cleaning solution and deionized water to ultrasonically clean for 15 minutes and dry in an oven;
[0081] Then put the dried substrate into the pretreatment vacuum chamber, and then transfer the ITO anode to the organic evaporation chamber after a 10-minute low-pressure oxygen plasma treatment with a voltage of 400 volts in an atmosphere with a vacuum degree of 10 Pa;
[0082] In the vacuum degree of 1 ~ 3 × 10 -5 In Pa's organic evaporation chamber, a 60-nm-thick AlQ-doped NPB hole-transport layer, a 5-nm-thick BCP hole-confinement layer, and a 45-nm-thick DCJTB-doped AlQ electron-transport layer were sequentially evaporated on the ITO layer. Floor;
[0083] Next, the unfinished device is transferred to the metal evaporation chamber, in the 5 ~ 8 × 10 -5 A 1.0 nm-thick LiF buffer layer was sequentially evaporated under a Pa...
Embodiment 2
[0087] First, chemically etch the ITO anode layer on the ITO glass into strip electrodes with a width of 10 mm and a length of 30 mm;
[0088] Then use cleaning solution and deionized water to ultrasonically clean for 15 minutes and dry in an oven;
[0089] Then put the dried substrate into the pretreatment vacuum chamber, and then transfer the ITO anode to the organic evaporation chamber after a 10-minute low-pressure oxygen plasma treatment with a voltage of 400 volts in an atmosphere with a vacuum degree of 10 Pa;
[0090] In the vacuum degree of 1 ~ 3 × 10 -5 In Pa's organic evaporation chamber, a 60-nm-thick AlQ-doped NPB hole-transport layer, a 5-nm-thick BCP hole-confinement layer, and a 40-nm-thick DCJTB-doped AlQ electron-transport layer were sequentially evaporated on the ITO layer. Floor;
[0091] Next, the unfinished device is transferred to the metal evaporation chamber, in the 5 ~ 8 × 10 -5A 1.0 nm-thick LiF buffer layer was sequentially evaporated under a Pas...
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