Method for manufacturing integrated PNP differential pair tube
A manufacturing method and technology of differential pair tubes, which are applied in the manufacture of semiconductor/solid-state devices, electrical components, circuits, etc., can solve the problems of low reverse amplification factor, high frequency, inapplicability of differential pair tubes, etc., and achieve high reliability, The effect of reducing the saturation pressure drop
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Embodiment 1
[0018] 1. If figure 1 and figure 2 As shown, the single-sided polished P+ silicon substrate 1 with crystal orientation has a resistivity of 0.001 ohm-cm, and an epitaxial layer is grown on the silicon substrate 1 as the N-base region 2, and the resistivity is 0.2 ohm-cm , with a thickness of 20 μm, an oxide layer 3 is grown by thermal oxidation;
[0019] 2. Diffusion of boron on the surface of the N base region 2 by photolithographic masking and etching, and the temperature of re-diffusion is 1160°C. The diffused boron junction is connected to the P+ silicon substrate 1 as the common P+ collector region 4 and forms a protective ring, and the epitaxial layer is separated into Two independent base regions, the surface impurity concentration of P+ collector region 4 is 10 20 / cm 3 ;
[0020] 3. Diffuse boron on the surface of the N-base region 2 to form a discrete emission region 5 through photolithographic masking and etching, and then diffuse at a temperature of 1000°C, c...
Embodiment 2
[0024] 1. If figure 1 and figure 2 As shown, the crystal direction is selected to polish the P+ silicon substrate 1 on one side, and its resistivity is 0.008 ohm-cm. An epitaxial layer is grown on the silicon substrate 1 as the N base region 2, and the resistivity is 2.0 ohm-cm. The thickness is 10 μm, and a layer of oxide layer 3 is grown by thermal oxidation;
[0025] 2. Diffusion of boron on the surface of the N base region 2 by photolithographic masking and etching, and the temperature of re-diffusion is 1200°C. The diffused boron junction is connected to the P+ silicon substrate 1 as the common P+ collector region 4 and forms a guard ring, and the epitaxial layer is separated into Two independent base regions, the surface impurity concentration of P+ collector region 4 is 4×10 19 / cm 3 ;
[0026] 3. Diffuse boron on the surface of the N-base region 3 to form the emitter region 5 by photolithographic masking and etching, and then diffuse at a temperature of 1160°C, c...
Embodiment 3
[0030] 1. If figure 1 and figure 2 As shown, the crystal direction is selected to polish the P+ silicon substrate 1 on one side, and its resistivity is 0.005 ohm-cm. An epitaxial layer is grown on the silicon substrate 1 as the N base region 2, and the resistivity is 1.0 ohm-cm. The thickness is 15 μm, and a layer of oxide layer 3 is grown by thermal oxidation;
[0031] 2. Diffuse boron on the surface of the N-base region 2 through photolithographic masking and etching, and the temperature of the re-diffusion is 1190°C. The diffused boron junction is connected to the P+ silicon substrate 1 as the common P+ collector region 4 and forms a guard ring, and the epitaxial layer is separated into Two independent base regions, the surface impurity concentration of P+ collector region 4 is 6×10 19 / cm 3 ;
[0032] 3. Diffuse boron on the surface of the N-base region 3 to form the emitter region 5 by photolithographic masking and etching, and then diffuse at a temperature of 1030°...
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