Light sensitive component array forming method of mercury cadmium telluride micro-table-board infrared detection chip

Abstract

The invention discloses a light sensitive component array forming method of a mercury cadmium telluride micro-table-board infrared detection chip, which relates to a manufacturing process technology of a photoelectric detector. The invention adopts the technical scheme that the forming method comprises the following steps of: firstly manufacturing a photoresist masking film graph for forming a deep micro-table-board array chip isolated groove on the surface of a mercury cadmium telluride infrared focal plane detection chip, then filling a certain quantity of bromine and hydrobromic acid mixed corrosive liquid of a mercury cadmium telluride material in a groove graph formed from a photoresist masking film by utilizing a spin-coating method, and controlling the depth of the isolated groove required by a deep micro-table-board array chip through controlling the depth and the corrosion time of the isolated groove graph formed from the photoresist masking film, thereby effectively solving the problems of process damage and low duty ratio existing in a conventional light sensitive component array forming method. The method has the characteristics of complete compatibility with a conventional process of the HgCdTe detection chip, low cost, high controllability, high uniformity, no process-induced electrical damage and the like.

Description

technical field [0001] The invention relates to a photodetector manufacturing process technology, in particular to a high-duty-ratio forming method for processing an array of light-sensitive elements on a micro-mesa chip of an HgCdTe infrared focal plane detector. Background technique [0002] Infrared focal plane array device is an advanced imaging sensor with both infrared information acquisition and information processing functions. There are important and extensive applications in military and civilian fields. Due to its irreplaceable status and role, major industrial countries in the world have listed HgCdTe infrared focal plane array device manufacturing technology as a high-tech project for key development. [0003] Driven by the advanced infrared application system, infrared detection technology has entered an important development stage of the third generation infrared focal plane detector characterized by large area array, miniaturization and multicolor, see S.Hor...

AI Technical Summary

Problems solved by technology

However, the dry etching technique can easily lead to electrical damage on the side wall of the deep micro-mesa array chip isolation trench, thus adversely affecting the electrode contact and electrical performance of the deep micro-mesa infrared focal plane detector.

Moreover, conventional wet chemical etching methods are isotropic, with severe lateral corrosion

Even if it does not cause electrical damage to the sidewall of the isolation trench, the severe lateral corrosion makes it unable to meet the high duty cycle isolation requirements of the photosensitive element of the deep micro-mesa array chip

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