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Method for rapidly welding large-area target with back plate

A rapid welding, large-area technology, applied in welding equipment, high-frequency current welding equipment, metal processing equipment, etc., can solve the problems of unsatisfactory substrate temperature rise, aluminum alloy recrystallization, microstructure change, etc., and achieve high bonding strength, The effect of preventing impact in a short period of time

Active Publication Date: 2011-09-07
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although it is also thermoelectric welding, the temperature rise of the substrate can no longer meet the welding requirements of the target. In this case, the aluminum alloy is likely to recrystallize and the microstructure will change.

Method used

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  • Method for rapidly welding large-area target with back plate
  • Method for rapidly welding large-area target with back plate
  • Method for rapidly welding large-area target with back plate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] Embodiment 1 Welding of high-purity Ti target and 6061Al alloy back plate

[0032] The target 1 is a 4N5 Ti target with a diameter of 350mm and a thickness of 15mm. The back plate 2 is a 6061Al alloy with a diameter of 380mm and a thickness of 20mm. Control the surface roughness Rz of the surface of the target and the back plate to be welded by sandblasting to about 100 μm, degrease the surface of the target and the back plate with decontamination powder, clean with alcohol + ultrasonic, and dry the surface in an oven; A layer of 6061 aluminum alloy powder 3 with a particle size of 5 μm to 8 μm is sandwiched between the target and the back plate. The thickness of the powder is about 2 mm. An indenter 4 is installed on the non-welding surface of the target and the back plate. The indenter is made of graphite for Conduct current and pressure. Pre-press the target and the back plate with the metal powder in the middle, the pre-press pressure is 6MPa, pre-press for 8min, t...

Embodiment 2

[0034] Example 2 Welding of high-purity Ti target and oxygen-free Cu backplate

[0035] The 4N5 Ti target has a diameter of 350mm and a thickness of 15mm, and the back plate is oxygen-free copper with a diameter of 380mm and a thickness of 20mm. Control the surface roughness Rz of the surface to be welded on the target and the backplane to about 150 μm by sandblasting, degrease the surface of the target and backplane with decontamination powder, clean with alcohol + ultrasonic, and dry the surface in an oven. Put a layer of industrial pure Cu powder with a particle size of about 5 μm between the target and the back plate to be welded. The thickness of the Cu powder is about 2mm. Set a pressure head on the non-welding surface of the target and the back plate to conduct current and pressure. Then put it into a high-current device, evacuate to below 8Pa, apply a pressure of 12MPa on both ends of the target to be welded and the back plate, and pass in a high-frequency pulse curre...

Embodiment 3

[0037]Example 3 Welding of high-purity Cu target and 6063 aluminum alloy backplane

[0038] The 6N Cu target has a diameter of 330mm and a thickness of 25mm, and the back plate is 6063 aluminum alloy with a diameter of 380mm and a thickness of 28mm. The surface roughness Rz of the surface to be welded on the target and the back plate is controlled at about 200 μm by sandblasting, the surface of the target and the back plate is degreased with decontamination powder, alcohol + ultrasonic cleaning, and the surface is dried in an oven. Between the target and the back plate to be welded, starting from the target side, sandwich three layers of powder with a particle size of about 5 μm. The first layer is industrial pure copper powder with a powder thickness of about 2 mm. The second layer is industrial pure copper powder. The mixed powder of copper and 6063 aluminum alloy has an atomic ratio of 1:1 and a thickness of about 2mm. The third layer is 6063 aluminum alloy powder with a th...

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Abstract

The invention belongs to the technical field of welding of targets, and in particular relates to a method for rapidly welding a large-scale target with a back plate (also called a target holder). The method comprises the following steps: roughing, washing and drying the to-be-welded surface of a target; scattering a certain thickness of metal powder between the target and the back plate; placing the target and the back plate into a high-current device; at a certain protective atmosphere, exerting a certain pressure at the two ends of the to-be-welded target and the to-be-welded back plate; welding the to-be-welded target and the to-be-welded back plate through a high-frequency pulse current, wherein the current is of between 1,000 and 9,000 A; and electrifying for 1 to 5 minutes to finishwelding. The method has the advantages of low requirement on equipment, low requirement on machining of the to-be-welded surfaces of the target and the back plate, reliable welding, shot required time, high production efficiency, capability of adapting the welding between most metal targets and dissimilar back plates, high welding strength between the target and the back plate, high reliability, simple operation, good repeatability and high production efficiency, and simultaneously, ensures that the performance of the microscopic structure of the target is not influenced.

Description

technical field [0001] The invention belongs to the technical field of target welding, in particular to a rapid welding method for a large-area target and a back plate. Background technique [0002] Sputtered thin film materials are widely used in related industries such as electronic information, storage records, and displays. At the same time, with the development of these industries, the demand for sputtering targets is also increasing year by year. The quality of the target has an important influence on the performance of the sputtering film, especially the preparation of semiconductor integrated circuit chips is developing towards a large size (8, 12 or even 18 inches), the size of the sputtering target and the sputtering power will also vary with With the increase of the sputtering target, the requirements for the purity of the sputtering target, the microstructure and the connection between the target and the backplane are also getting higher and higher. The connect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K13/00B23K13/06
Inventor 范亮何金江江轩熊晓东廖赞刘书芹朱晓光
Owner GRIKIN ADVANCED MATERIALS
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