p-i-n type InGaN quantum dot solar battery structure and manufacture method thereof

Abstract

The invention relates to the technical field of inorganic photoelectric technology, and discloses a p-i-n type InGaN quantum dot solar battery structure and a manufacture method thereof. The p-i-n type InGaN quantum dot solar battery structure comprises a substrate, a low-temperature gallium nitride nucleation layer, a non-intentionally doped gallium nitride buffer layer, an n-type doped InxGal-xN layer, a non-doped i layer InyGal-yN quantum dot structure and a p type doped InxGal-xN layer. By adopting an InGal-xN ternary alloy material and a quantum dot structure, using the advantage of the adjustability of alloy bandwidth, combining the advantage of a quantum dot superlattice structure and strictly controlling the growth condition, the p-i-n structural material with an InyGal-yN quantum dot as an i layer and the InGal-Xn as a barrier layer can be obtained with high quality, thereby achieving 63 percent of limit conversion efficiency in theory.

Description

technical field [0001] The invention relates to the field of inorganic photoelectric technology, in particular to a p-i-n type InGaN quantum dot solar cell structure and a manufacturing method thereof. The present invention adopts novel In x Ga 1-x N ternary alloy semiconductor materials, using the unique advantages of InGaN quantum dot structure, is expected to lay the foundation for a new chapter in the efficient use of solar energy by humans. Background technique [0002] A solar cell is a device that directly converts light energy irradiated by the sun into electrical energy. Solar cells are used to provide electrical energy to loads such as lights, televisions, and computers. In practical applications, electrical energy storage devices are also involved, so that the load can be continuously supplied with electrical energy without sunlight. Solar cells generate photovoltage when exposed to light. In the case of an open circuit in the external circuit, the photogener...

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Problems solved by technology

[0006] In addition, some people in the world have been researching InAs / GaAs quantum dot solar cells (A.Marti, Thin Solid Films, 511-512, (2006) 638-644). However, since the bandwidth of GaAs as a barrier layer is only 1.4eV, it is not The ideal barrier bandwidth of quantum dot intermediate bandgap solar cells (2.36eV ​​under a standard sun), so its battery characteristics are not ideal, and it does not fully demonstrate the advantages of quantum dot batteries

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