Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Numerical control scanning waveform generator

A technology of scanning waveforms and generators, which is applied in semiconductor/solid-state device manufacturing, discharge tubes, electrical components, etc., can solve problems such as complex injection processes, achieve isolation potential interference, save control costs, and meet horizontal scanning accuracy requirements Effect

Inactive Publication Date: 2010-06-30
BEIJING ZHONGKEXIN ELECTRONICS EQUIP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the continuous improvement of IC integration, the implantation process is becoming more and more complex

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Numerical control scanning waveform generator
  • Numerical control scanning waveform generator

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] The present invention will be further introduced below in conjunction with the accompanying drawings and specific embodiments, but it is not intended as a limitation to the novelty of the present invention.

[0028] As shown in Fig. 1, the numerical control scanning waveform generator realizes the general schematic diagram of scanning waveform output, the system controller 3 controls the ion beam scanning, and the scanning waveform can be a piecewise linear curve defined by the slope and the end point of each segment. The data defining the waveform is stored in the waveform memory in the system controller 3, and the system controller 3 loads the data of the slope and the position end signal into two D / A converters of DAC1 and DAC2 respectively. The output of DAC1 drives the integrator 5, the output of the integrator 5 and the output of DAC2 are supplied to the input terminal of the comparator 4, when the integrator 5 reaches the end point of the specified position, the c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a numerical control scanning waveform generator, which comprises a DAC1 (digital-to-analog converter), a DAC2, a system controller, a comparator, an integrator, an amplifier, a resistor, a capacitor, a scanning speed controller, a position pulse and a scanning waveform. Compared with the conventional scanning waveform generator of an ion implanter, the invention is characterized in that the scanning cycle is a fixed constant, but within a scanning cycle, the real scanning time can be precisely adjusted by software, that is, the scanning duty ratio can be precisely adjusted. Moreover, in a beam adjusting period which has no need of scanning beam, the beam deflecting function can act on, and a beam deflection controller is saved.

Description

technical field [0001] The invention discloses a digitally controlled scanning generator, which is used for ion implanters in semiconductor manufacturing, in particular to high-inclination ion implanters used in semiconductor manufacturing ion implantation processes, and more specifically relates to 8" using electrostatic deflection and scanning , 12" large wafer ion implanter, which belongs to the field of semiconductor device manufacturing. Background technique [0002] Military microelectronics technology has played a huge role in promoting the development of the entire military high technology, and its development speed and scale have become an important symbol to measure a country's military technology progress and weaponry level. [0003] Ion implanter is one of the most critical manufacturing equipment for military microelectronic devices. Silicon integrated circuits, gallium arsenide ultra-high-speed integrated circuits, and gallium arsenide microwave / millimeter wav...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01J37/317H01J37/147H01L21/265
Inventor 王迪平孙勇胡东京
Owner BEIJING ZHONGKEXIN ELECTRONICS EQUIP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com