Resin covering method and resin covering device

Abstract

The present invention provides a resin covering method and a resin covering device for appropriately smoothing the heave and warpage of workpieces to make grinded workpieces form a rigorous flat state in the consideration of gravity. The surface (1a) of a wafer (1) is adsorbed on the adsorption surface (24a) of an adsorption part (24) of a pressing pad (23) for straightening the deformation of the wafer (1). Subsequently, the wafer (1) in a straightening state is loaded onto a resin (P1) in liquid state for being pressed, and then, after the pressing pad (23) is departed from the wafer (1) to make the wafer deformed to smooth the warpage and the like, the resin (P1) is solidified. Because, the wafer (1) is deformed on the resin (P1) from a straightening state, deformation caused by gravity force will not be generated, and the wafer in a rigorous flat state after being grinded can be obtained.

Description

technical field [0001] The present invention relates to a method of covering one surface of the workpiece with resin when grinding a thin plate workpiece such as a semiconductor wafer into a plane, and forming the surface on the resin side as a reference plane when grinding the workpiece. Background technique [0002] A semiconductor wafer as a material of a semiconductor or an electronic component includes, for example, a semiconductor wafer made of a single crystal material such as silicon, or a semiconductor wafer made of a compound containing a plurality of elements. With regard to these wafers, after being formed into cylindrical ingots, they are cut into substrate-shaped pieces by a wire saw or the like, and then grinding, etching, etc. are performed to remove undulations and warpages generated at the time of slicing, thereby processing the wafers to be thin and flat. [0003] However, in order to perform the above-mentioned etching, a large-scale facility is required...

AI Technical Summary

Problems solved by technology

In addition, as a gas capable of etching silicon used for wafers, there are, for example, SF 6 and other fluorinated gases, but this gas is a greenhouse gas, and the price is very high

Therefore, there are disadvantages that large-scale equipment and high-priced gas are used for etching, and huge costs are required.

For example, if the thickness of the cover applied to the wafer is very thin, fluctuations and warpage cannot be sufficiently absorbed by the cover

In addition, when the thickness of the cover applied to the wafer is very thick, there will be a problem that when the wafer is ground by pressing the rotating grinding wheel against the wafer with a general grinding device, the wafer will be damaged due to the cover. Even if the undulation and warpage can be removed, it is difficult to grind the wafer to a uniform thickness

However, since the resin and the like are cured while the internal stress remains in the wafer, when the cover is removed after grinding the wafer, so-called waviness and warpage may occur due to the internal stress remaining in the wafer. The rebound phenomenon of recovery may not be able to meet the requirements

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