Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Light-emitting device and manufacturing method thereof

A light-emitting device, photoluminescence technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of uneven phosphor powder, aging yellowing, large scattering of phosphor powder particles, etc., to avoid process instability and avoid The effect of aging and yellowing

Active Publication Date: 2012-05-30
江苏北极皓天科技有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the phosphor powder mixed in the resin is bonded to the light-emitting device prepared by the light-emitting diode, there will usually be large fluctuations due to the unevenness of the phosphor powder mixed in the resin, the change in the weight ratio, and the different scattering of the phosphor particles. Defects such as color shift, color difference and yellow circle, and these organic resins are also prone to aging and yellowing due to environmental influences, which brings a lot of inconvenience to the application of white light LEDs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Light-emitting device and manufacturing method thereof
  • Light-emitting device and manufacturing method thereof
  • Light-emitting device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0029] figure 2 A schematic structural view of a light emitting device according to an embodiment of the present invention is shown. The light-emitting device includes: a light-emitting diode, a reflective layer 200 and a crystal substrate 600 with photoluminescent function. Wherein the light-emitting diode includes: the crystal growth transition layer 101 of the light-emitting diode, the electron-type conductive layer 102 of the light-emitting diode, the light-emitting layer 103 of the inorganic light-emitting diode, the hole-type conductive layer 104 of the light-emitting diode, and the hole-type conductive electrode 105 of the light-emitting diode , The electronic conductive electrode 106 of the light emitting diode.

[0030] figure 2 The working principle of the light-emitting device shown is as follows: the light-emitting layer 103 of the light-emitting diode emits light with a wavelength range from ultraviolet to blue-green (the wavelength range of light can be selec...

Embodiment approach 2

[0036] image 3 A schematic structural view of a light emitting device according to another embodiment of the present invention is shown. image 3 The light-emitting device shown includes: a light-emitting diode, a substrate 300 of the light-emitting diode, a reflective layer 200, and a crystal substrate 600 capable of emitting light. Wherein the light-emitting diode comprises: the crystal growth transition layer 101 of the light-emitting diode, the electron-type conductive layer 102 of the light-emitting diode, the light-emitting layer 103 of the light-emitting diode, the hole-type conductive layer 104 of the light-emitting diode, the hole-type conductive electrode 105 of the light-emitting diode, Electronically conductive electrode 106 of the LED.

[0037] In this embodiment, each semiconductor layer of the light-emitting diode (including the crystal growth transition layer 101 of the light-emitting diode, the electron-type conductive layer 102 of the light-emitting diode, ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a light-emitting device which comprises a substrate, a light-emitting diode prepared or combined on the substrate and related optical and mechanical structures. The substrate consists of crystals with photoluminescence function and polycrystalline or amorphous materials, and light emitted by the light-emitting diode is emitted by penetrating the substrate. The substrate emits the photoluminescence which is longer than the wavelength of the light-emitting diode under the photoluminescence excitation of the light-emitting diode. The photoluminescence which is transmittedby the light-emitting diode is mixed with the photoluminescence of the substrate for producing white light. The invention further discloses a method for preparing the light-emitting device.

Description

technical field [0001] The invention relates to a light-emitting device and a manufacturing method thereof, in particular to a device combining electroluminescence and photoluminescence and a manufacturing method thereof. Background technique [0002] Light-emitting diodes (LEDs) have the advantages of all solid state, good color saturation, and high luminous efficiency, and are gradually being used in the fields of display and lighting. White LEDs are widely used in lighting applications. This device usually uses blue LEDs to incompletely excite yellow phosphors to obtain yellow light, and then the blue light emitted by LEDs is mixed with yellow light to produce white light. For example, in gemstones (Al 2 o 3 ) or silicon carbide (SiC) substrates grown on aluminum, indium-doped gallium nitride (Ga1-xInxN (x is approximately equal to 0.25)) blue light-emitting diode chips and cerium-doped yttrium mixed in organic silicon or epoxy resin Aluminum garnet (YAG:Ce) yellow pho...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/46
Inventor 孙润光刘宏宇
Owner 江苏北极皓天科技有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com