Low-power dissipation RS latch unit and low-power dissipation master-slave D flip-flop

A low-power, latch technology, applied in electrical components, pulse generation, electrical pulse generation, etc., can solve problems such as energy consumption, reduce leakage power consumption, affect circuit performance, etc., achieve low power consumption characteristics, save leakage Power consumption, effect of good leakage power suppression performance

Inactive Publication Date: 2010-07-14
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

1. The additional circuit introduced consumes energy while reducing the leakage power consumption; 2. It affects the performance of the circuit while reducing the leakage power consumption

Method used

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  • Low-power dissipation RS latch unit and low-power dissipation master-slave D flip-flop
  • Low-power dissipation RS latch unit and low-power dissipation master-slave D flip-flop
  • Low-power dissipation RS latch unit and low-power dissipation master-slave D flip-flop

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Embodiment one: if Figure 5 As shown, a low-power RS ​​latch unit includes an input drive and synchronization circuit, a pull-down circuit, a power control circuit, and a first inverter and a second inverter that are cross-coupled to each other. The input drive and synchronization circuit consists of The third PMOS transistor P3, the fourth PMOS transistor P4, the fifth PMOS transistor P5 and the sixth PMOS transistor P6 are composed, the pull-down circuit is composed of the third NMOS transistor N3 and the fourth NMOS transistor N4, and the power control circuit is composed of the fifth NMOS transistor N5 Composition, the first inverter is composed of the first NMOS transistor N1 and the first PMOS transistor P1, the second inverter is composed of the second NMOS transistor N2 and the second PMOS transistor P2, the first PMOS transistor P1 and the second PMOS transistor P2 is a high-threshold PMOS transistor, the third NMOS transistor N3, the fourth NMOS transistor N4...

Embodiment 2

[0029] Embodiment two: if Figure 6 and Figure 7 A low-power master-slave D flip-flop is shown, which consists of input inverter XI1, clock inverter XI2 and two cascaded first low-power RS ​​latch units 1 and second low-power RS The latch unit 2 is composed of the first low-power RS ​​latch unit 1 and the second low-power RS ​​latch unit 2 with the same internal structure, both of which use Figure 5 In the low-power RS ​​latch unit shown in Embodiment 1, the first low-power RS ​​latch unit 1 includes an input drive and synchronization circuit, a pull-down circuit, a power control circuit, and a first inverting phase coupled with each other. and the second inverter, the input drive and synchronization circuit is composed of the third PMOS transistor P3 1 , the fourth PMOS tube P4 1 , the fifth PMOS tube P5 1 and the sixth PMOS transistor P6 1 The pull-down circuit consists of the third NMOS transistor N3 1 and the fourth NMOS transistor N4 1 The power control circuit c...

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PUM

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Abstract

The invention discloses a low-power dissipation RS latch unit and a low-power dissipation master-slave D flip-flop, which is characterized in that the low-power dissipation RS latch unit comprises an input driving and synchronizing circuit, a pull-down circuit, a function control circuit, a first phase inverter and a second phase inverter, wherein the first phase inverter and the second phase inverter are mutually overlapped and coupled. The low power dissipation master-slave D flip-flop is composed of an input phase inverter, a clock phase inverter, a first low-power dissipation RS latch unit and a second low-power dissipation RS latch unit, wherein the first low power dissipation RS latch unit and the second low power dissipation RS latch unit have the same inner structure and are cascaded. The low power dissipation master-slave D flip-flop has the advantages that the low-power dissipation RS latch units use three kinds of leaked power consumption lowering technology, i.e. P-type logic technology, function control technology and double-threshold technology, so that the low-power dissipation RS latch units have better leaked power consumption inhibiting performance. The low-power dissipation master-slave D flip-flop has simple and totally symmetrical circuit structure. Compared with the traditional single-threshold transmission gate D trigger circuit, the invention can save 80% of leaked power consumption and 40% of total power consumption in the 90 nm process, so that the invention is suitable to serve as a digital circuit unit to the design of low-power consumption integrated circuits in the deep sub-micron CMOS process.

Description

technical field [0001] The invention relates to a D flip-flop, in particular to a low-power RS ​​latch unit and a low-power master-slave D flip-flop. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the scale and complexity of existing integrated circuits are increasing day by day, and the problem of power consumption of integrated circuits is becoming more and more prominent. Power consumption has become a factor in addition to speed and area in integrated circuit design Another important constraint of . The low-power design technology of integrated circuits has become an important research hotspot in the field of integrated circuit design. The power consumption of CMOS digital integrated circuits is mainly composed of dynamic power consumption, short-circuit power consumption and leakage current power consumption. In the CMOS technology above 0.13μm, the dynamic power consumption accounts for the vast majority of th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03K19/094H03K3/012
Inventor 胡建平邬建波李林峰张卫强
Owner NINGBO UNIV
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