Method for preparing flexible CdTe thin film solar cell
A technology of solar cells and thin films, applied in circuits, electrical components, climate sustainability, etc., can solve the problems of understanding, not being able to fully satisfy integrated and portable power sources, and low mass specific power, and achieve the effect of improving battery efficiency
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Publication Date
- 2010-08-04
- Estimated Expiration
- Not applicable · inactive patent
Smart Images
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Abstract
Description
Technical field:
[0001] The invention relates to a method for manufacturing a solar cell based on a flexible CdTe (cadmium telluride) thin film, and belongs to the technical field of nano inorganic compound energy material manufacturing technology. Background technique:
[0002] Energy is the basis for the functioning of modern society. With the growth of population and economy in today's world, the increasing scarcity of energy resources, and the deterioration of the environment, people's demand for electric energy is increasing, and at the same time, human society has higher and higher requirements for sustainable energy development. Solar energy is a sustainable and clean energy, and the development and utilization of solar energy has set off an upsurge worldwide. This is very conducive to the sustainable development of the ecological environment and the benefit of future generations, so countries around the world are investing in research and development of solar cells....
Examples
Embodiment Construction
[0031] In order to further illustrate the technical content of this patent, the preparation method of this patent is now described through specific implementation methods:
[0032] (1) Pretreatment of stainless steel substrate 5: use 0.1 cm thick stainless steel as the deposition substrate and back electrode, use acetone to ultrasonically clean for 10 minutes to remove surface grease, and then ultrasonically clean with deionized water for 10 minutes to remove impurities on the stainless steel surface , and finally put the stainless steel into the pretreatment chamber 6 after drying, and use plasma to clean the stainless steel substrate 5 .
[0033] (2) Chemical vapor growth graphite buffer layer 4: the stainless steel substrate 5 is transferred to the chemical vapor deposition furnace 7, and high-purity CH is introduced into the chemical vapor deposition chamber 4 and H 2 , the deposition temperature is 300° C., the deposition pressure is 2000 Pa, and the deposition thickness...