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Absorbed layer for thin film photovoltaic and solar cell made therefrom

A technology of solar cells and overall composition, applied in the direction of photovoltaic power generation, circuits, electrical components, etc., can solve the problems of increasing the interface and complexity, the amount of time and money spent

Inactive Publication Date: 2010-08-18
GENERAL ELECTRIC CO
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the high number of processing steps, layers, interfaces and complexity increases the amount of time and money it takes to fabricate these solar cells

Method used

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  • Absorbed layer for thin film photovoltaic and solar cell made therefrom
  • Absorbed layer for thin film photovoltaic and solar cell made therefrom
  • Absorbed layer for thin film photovoltaic and solar cell made therefrom

Examples

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example 1

[0046] Example 1 provides a method for the selenization of metal alloys. Step A: Preparation of Metal Alloy

[0047] Alloys (eg 18) were prepared using copper, indium and gallium. Alloys were prepared by arcmelting Cu (99.99% pure from Sigma Aldrich), In (99.99% pure from Sigma Aldrich) and Ga (99.999% pure from Sigma Aldrich). The metal alloy thus formed was then rolled into sheets, which were then cut into three pieces, eg Sample 1, Sample 2 and Sample 3. The length, width and thickness of the samples are measured in microns. Length, width and thickness are provided in Table 1 below. Table 1

[0048] An alloy such as 18 was annealed at a temperature of about 500 degrees Celsius to study the effect of heating of the metal alloy. It was found that when the alloy (eg 18) was annealed, indium and gallium diffused from the bulk of the metal (eg 21 ) to the surface of the metal (eg 19). When sample 4 was heated to about 500 degrees Celsius for 24 hours in a nitrogen atmosp...

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Abstract

The invention discloses an absorbed layer for thin film photovoltaic and a solar cell made therefrom. A method comprises the following steps: in some embodiments, providing metal alloy, carrying out annealing on the metal alloy, and enabling the metal alloy to contact with the steam of selenium or sulphur or the steam of the mixture of selenium and sulphur. The annealed metal alloy is provided by the metal alloy formed in annealing and comprising an first uniform main assembly composition and a second uniform surface assembly, wherein the annealed metal alloy is provided with a second non-uniform main assembly and a second non-uniform surface assembly when contacting the selenium or sulphur or the steam of the mixture of selenium and sulohur so as to generate selenide or sulfide metal alloy. The metal alloy is provided with a layer which is formed by diffusion rather than by the sequence of deposition and total evaporation from location of metal with low melting point.

Description

[0001] related application [0002] This application claims the benefit of priority from Indian Patent Application 2813 / CHE / 2007, filed November 29, 2007, the entire contents of which are hereby incorporated by reference under Title 35, United States Code, Section 119. technical field [0003] The present invention relates generally to the field of photovoltaics. In particular, the present invention relates to a method of preparing an absorber layer for use in a solar cell, and a solar cell made from the absorber layer. Background technique [0004] Solar energy is abundant year-round in many parts of the world. Unfortunately, solar energy is not effectively used to generate electricity. The cost of solar cells and the electricity they generate is typically very high. For example, typical thin-film solar cells have an energy conversion efficiency of less than twenty percent. Typically, a solar cell includes multiple layers formed on a substrate. Unfortunately, the effic...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/042H01L31/02H01L31/04
CPCY02E10/50Y02P70/50
Inventor S·K·拉马塞沙S·库马M·纳亚克A·萨哈H·N·艾耶
Owner GENERAL ELECTRIC CO