Polyamide resin, photosensitive resin composition, method for forming cured relief pattern, and semiconductor device

A technology of polyamide resin and photosensitive resin, which is applied in the fields of polyamide resin, photosensitive resin composition, formation of cured relief patterns and semiconductor devices, can solve the problem of inability to complete thermal imidization, deterioration of various physical properties, etc. problem, to achieve the effect of excellent chemical resistance and excellent chemical resistance

Active Publication Date: 2010-08-18
ASAHI KASEI KK
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In recent years, in the manufacturing process of semiconductor devices, there has been an increasing demand for materials that can be thermally cured (thermal imidization) at lower temperatures, mainly due to the materials of components and structural design. The higher, but in th

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Polyamide resin, photosensitive resin composition, method for forming cured relief pattern, and semiconductor device
  • Polyamide resin, photosensitive resin composition, method for forming cured relief pattern, and semiconductor device
  • Polyamide resin, photosensitive resin composition, method for forming cured relief pattern, and semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0195] Example

[0196] Hereinafter, the present invention will be explained through examples and comparative examples. In addition, a list of combinations of polymer raw materials in the following synthesis examples is shown in Table 1 below.

Example Embodiment

[0197] [Synthesis Example 1]

[0198] (Synthesis of phthalic acid compound blocking body AIPA-MO)

[0199] In a separable flask with a capacity of 5 liters, 543.5 g (3.0 mol) of 5-aminoisophthalic acid (hereinafter abbreviated as AIPA) was put. }, 1700g of N-methyl-2-pyrrolidone {hereinafter referred to as NMP. }, mix and stir, and heat to 50°C in a water bath. 500g of γ-butyrolactone for input was added dropwise with a dropping funnel {hereinafter referred to as GBL. } The solution obtained by diluting 512.0 g (3.3 mol) of 2-methacryloyloxyethyl isocyanate is directly stirred at 50°C for about 2 hours.

[0200] By low molecular weight gel permeation chromatography {hereinafter described as low molecular weight GPC. } After confirming the completion of the reaction (disappearance of 5-aminoisophthalic acid), put the reaction solution into 15 liters of ion-exchanged water, stir and stand still, wait for the crystallization and precipitation of the reaction product, filter, and was...

Example Embodiment

[0201] [Synthesis Example 2]

[0202] (Synthesis of phthalic acid compound blocking body AIPA-BA)

[0203] Into a separable flask with a capacity of 5 liters, 543.5 g (3.0 mol) of AIPA and 1700 g of NMP were put, mixed and stirred, and heated to 50°C in a water bath. A solution obtained by diluting 789.46 g (3.3 mol) of 1,1-bis(acryloxymethyl)ethyl isocyanate with 500 g of GBL was dropped into the dropping funnel, and the solution was directly stirred at 50°C for about 2 hours.

[0204] After confirming the completion of the reaction (disappearance of AIPA) by low-molecular-weight GPC, put the reaction solution into 15 liters of ion-exchanged water, stir and stand still, wait for the crystallization and precipitation of the reaction product, filter, and wash with water at 40°C Vacuum drying is carried out for 48 hours to obtain AIPA-BA after the action of the amino group of AIPA and the isocyanate group of 1,1-bis(acryloxymethyl)ethyl isocyanate. The resulting AIPA-BA has a low mol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

Disclosed is a photosensitive resin composition having excellent photosensitive characteristics, which provides a resin film with excellent film characteristics even when the resin film is formed under heating/curing conditions such as at 200 DEG C or less. A polyamide resin used in the photosensitive resin composition is also disclosed. The polyamide resin contains structural units represented by formula (1) with a repetition number of 2-150 which is within the range of 80-100% of the total number of the structural units constituting the polyamide resin. [In formula (1), X represents a trivalent organic group having 6-15 carbon atoms; m represents 0 or 2; Y represents a divalent organic group having 6-35 carbon atoms when m = 0, and represents a tetravalent organic group having 6-35 carbon atoms when m = 2; and R1 represents an aliphatic group having at least one radically polymerizable unsaturated linking group with 5-20 carbon atoms, which may contain an atom other than carbon atoms].

Description

technical field [0001] The present invention relates to heat-resistant coating films such as insulating materials for electronic components, surface protection films of semiconductor devices, interlayer insulating films, and α-ray shielding films, and semiconductor devices equipped with image sensors, micromachines, and microdrives. A polyamide resin to be used, a photosensitive resin composition containing the polyamide resin, a method for forming a cured relief pattern using the photosensitive resin composition, and a semiconductor device having the cured relief pattern. More specifically, the present invention relates to a product having excellent photosensitive properties when exposed to ultraviolet rays, for example, exhibiting excellent heat resistance, chemical resistance, mechanical properties and low residual stress properties even under heat curing conditions of 200° C. or lower, A novel photosensitive polyamide resin, a photosensitive resin composition containing th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C08G69/26C08G73/22G03F7/027G03F7/075G03F7/085H01L21/027
CPCG03F7/0387G03F7/037G03F7/0751C08L77/06
Inventor 木村正志金田隆行丹羽基博平田竜也本多正树
Owner ASAHI KASEI KK
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap