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Polyamide resin, photosensitive resin composition, method for forming cured relief pattern, and semiconductor device

A technology of polyamide resin and photosensitive resin, which is applied in the fields of polyamide resin, photosensitive resin composition, formation of cured relief patterns and semiconductor devices, can solve the problem of inability to complete thermal imidization, deterioration of various physical properties, etc. problem, to achieve the effect of excellent chemical resistance and excellent chemical resistance

Active Publication Date: 2010-08-18
ASAHI KASEI KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] In recent years, in the manufacturing process of semiconductor devices, there has been an increasing demand for materials that can be thermally cured (thermal imidization) at lower temperatures, mainly due to the materials of components and structural design. The higher, but in the case of the polyimide resin precursor composition of the prior art, if the heating and curing temperature is lowered, thermal imidization cannot be completed, and various physical properties are deteriorated, so the lower limit of the heating and curing temperature At best around 300°C

Method used

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  • Polyamide resin, photosensitive resin composition, method for forming cured relief pattern, and semiconductor device
  • Polyamide resin, photosensitive resin composition, method for forming cured relief pattern, and semiconductor device
  • Polyamide resin, photosensitive resin composition, method for forming cured relief pattern, and semiconductor device

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Embodiment

[0196] Hereinafter, the present invention will be described by way of examples and comparative examples. In addition, the combination list of the polymer raw material of each synthesis example mentioned below is shown in the following Table 1.

Synthetic example 1

[0198] (Synthesis of phthalic acid compound sealer AIPA-MO)

[0199] Into a detachable flask with a capacity of 5 liters, 543.5 g (3.0 mol) of 5-aminoisophthalic acid {hereinafter abbreviated as AIPA was added. }, 1700 g of N-methyl-2-pyrrolidone {hereinafter referred to as NMP. }, mix and stir, and heat to 50°C in a water bath. 500 g of gamma-butyrolactone {hereinafter referred to as GBL was added dropwise thereto with a dropping funnel. } A solution obtained by diluting 512.0 g (3.3 mol) of 2-methacryloyloxyethyl isocyanate was stirred at 50° C. for about 2 hours as it was.

[0200]By low molecular weight gel permeation chromatography {hereinafter referred to as low molecular weight GPC. }After confirming that the reaction is complete (disappearance of 5-aminoisophthalic acid), the reaction solution is dropped into 15 liters of ion-exchanged water, stirred, left standing, waiting for the crystallization and precipitation of the reaction product, filtering, and after appropria...

Synthetic example 2

[0202] (Synthesis of phthalic acid compound block AIPA-BA)

[0203] In a detachable flask with a capacity of 5 liters, 543.5 g (3.0 mol) of AIPA and 1700 g of NMP were put in, mixed and stirred, and heated to 50° C. in a water bath. A solution obtained by diluting 789.46 g (3.3 mol) of 1,1-bis(acryloyloxymethyl)ethyl isocyanate with 500 g of GBL was added dropwise thereto with a dropping funnel, and stirred at 50° C. for about 2 hours as it was.

[0204] After confirming the completion of the reaction (disappearance of AIPA) by low-molecular-weight GPC, put the reaction solution into 15 liters of ion-exchanged water, stir and let it stand, wait for the crystallization and precipitation of the reaction product, filter it, wash it with water appropriately, and then place it at 40°C Vacuum drying for 48 hours, thereby obtaining AIPA-BA after the amino group of AIPA and the isocyanate group of 1,1-bis(acryloyloxymethyl)ethyl isocyanate reacted. The low molecular weight GPC purity...

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Abstract

Disclosed is a photosensitive resin composition having excellent photosensitive characteristics, which provides a resin film with excellent film characteristics even when the resin film is formed under heating / curing conditions such as at 200 DEG C or less. A polyamide resin used in the photosensitive resin composition is also disclosed. The polyamide resin contains structural units represented by formula (1) with a repetition number of 2-150 which is within the range of 80-100% of the total number of the structural units constituting the polyamide resin. [In formula (1), X represents a trivalent organic group having 6-15 carbon atoms; m represents 0 or 2; Y represents a divalent organic group having 6-35 carbon atoms when m = 0, and represents a tetravalent organic group having 6-35 carbon atoms when m = 2; and R1 represents an aliphatic group having at least one radically polymerizable unsaturated linking group with 5-20 carbon atoms, which may contain an atom other than carbon atoms].

Description

technical field [0001] The present invention relates to heat-resistant coating films such as insulating materials for electronic components, surface protection films of semiconductor devices, interlayer insulating films, and α-ray shielding films, and semiconductor devices equipped with image sensors, micromachines, and microdrives. A polyamide resin to be used, a photosensitive resin composition containing the polyamide resin, a method for forming a cured relief pattern using the photosensitive resin composition, and a semiconductor device having the cured relief pattern. More specifically, the present invention relates to a product having excellent photosensitive properties when exposed to ultraviolet rays, for example, exhibiting excellent heat resistance, chemical resistance, mechanical properties and low residual stress properties even under heat curing conditions of 200° C. or lower, A novel photosensitive polyamide resin, a photosensitive resin composition containing th...

Claims

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Application Information

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IPC IPC(8): C08G69/26C08G73/22G03F7/027G03F7/075G03F7/085H01L21/027
CPCG03F7/0387G03F7/037G03F7/0751C08L77/06
Inventor 木村正志金田隆行丹羽基博平田竜也本多正树
Owner ASAHI KASEI KK
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