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A method for preparing suspended zno nanowire field effect transistor

A technology of field-effect transistors and nanowires, applied in nanotechnology, nanotechnology, nanostructure manufacturing, etc., can solve problems such as inability to optimize device structure and inability to guide device process, and achieve cost saving, easy process, and simple process Effect

Active Publication Date: 2012-02-08
SOI MICRO CO LTD
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, the transport mechanism of nanowires has not been well simulated, and the device structure cannot be optimized, so that it cannot effectively guide the device process

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  • A method for preparing suspended zno nanowire field effect transistor
  • A method for preparing suspended zno nanowire field effect transistor
  • A method for preparing suspended zno nanowire field effect transistor

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Embodiment Construction

[0039] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0040] In the general ZnO nanowire field-effect transistor preparation process, it is necessary to peel off the ZnO nanowire from the self-growth substrate and deposit it on the P++ type Si substrate, while in the device preparation process, the ZnO nanowire is deposited on the substrate surface Yes, only by electrostatic adsorption, it is easy to cause the nanowires to fall off during the photoresist stripping or cleaning process, and the substrate with ZnO nanowires is also very easy to cause the ZnO nanowires to fall off during the process of evaporating metal stripping. , so that the fabrication of the entire field effect transistor fails. Therefore, in order to prevent the nanowires from falling off during the photor...

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Abstract

The invention discloses a method for preparing a suspended ZnO nanowire field effect transistor. The method includes: growing a layer of silicon dioxide dielectric on a P++ type silicon substrate to form a field effect transistor substrate; Apply a layer of photoresist and expose by photolithography; evaporate the source and drain metal to form the source and drain of the suspended ZnO nanowire field effect transistor; evaporate the back metal to form the gate of the suspended ZnO nanowire field effect transistor; deposit the ZnO nanowires onto the field effect transistor substrate that has evaporated the source and drain metal; perform annealing treatment to complete the preparation of the suspended ZnO nanowire field effect transistor. The invention has the advantages of obvious results, simple and easy process, economical applicability and strong reliability, and can be easily promoted and applied in the production of microwave and millimeter wave compound semiconductor devices.

Description

technical field [0001] The invention relates to the technical field of compound semiconductor devices, in particular to a method for preparing a suspended ZnO nanowire field effect transistor. Background technique [0002] One-dimensional nanomaterials are new materials that are nanoscale in the two-dimensional direction and macroscopic in length. As early as 1970, French scientists first developed carbon fibers with a diameter of 7nm. In the past decade, semiconductor quasi-one-dimensional nanowires have received extensive international attention due to their great application prospects in nanoelectronics and nano-optoelectronics. In 1991, Japan discovered carbon nanotubes with a high-resolution electron microscope, which promoted the research of the entire one-dimensional nanomaterial. In the past ten years, a variety of one-dimensional nanomaterials have been synthesized by various methods, such as nanotubes, nanorods, nanowires, semiconductor quantum wires, nanobelts, a...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/20H01L21/324B82B3/00
Inventor 付晓君张海英徐静波黎明
Owner SOI MICRO CO LTD