Method for preparing top gate top contact self-alignment Organic Thin Film Transistor (OTFT)

Abstract

The invention belongs to the technical field of microelectronics, in particular to a method for preparing a top gate top contact self-alignment type Organic Thin Film Transistor (OTFT). The method comprises the following steps of: firstly, preparing an active layer on a clean insulating substrate by utilizing a vacuum evaporation method; then preparing an insulating layer by utilizing a vacuum evaporation method and patterning the insulating layer by a film masking method, namely forming a step structure of the active layer-insulating layer-active layer; and finally preparing a metal electrode layer by utilizing the vacuum evaporation method, wherein a source electrode, a gate electrode and a drain electrode are simultaneously formed in the last process. The invention has the advantages of simple process and good device characteristics; and a self-alignment process method in an inorganic TFT device is applied in the preparing process of the OTFT, which reduces the overlapping area among the gate electrode, the source electrode and the drain electrode, thereby reducing the leakage current between the gate electrode and the drain electrode and being beneficial to improving the on-off current ratio of the device.

Description

Technical field [0001] The invention belongs to the technical field of microelectronics, and specifically relates to a method for preparing a top-gate top-contact self-aligned organic thin film transistor (Organic Thin Film Transistor, OTFT). Background technique [0002] As the basic core unit of organic electronics, OTFT has received widespread attention all over the world, and it occupies a very important position in organic electronics. [0003] The basic structure of OTFT is composed of a substrate, a gate electrode, an insulating layer, an active layer, and source and drain electrodes. It is a three-terminal active device. According to the relative position between the gate electrode and the active layer, the OTFT can be divided into two types: top gate structure and bottom gate structure. The gate electrode above the active layer is the top gate structure, and the gate electrode is on the active layer. The bottom is the bottom gate structure; according to the relative posit...

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Problems solved by technology

[0005] From the study of material properties, SiO 2 From the point of view of the surface interface state of organic materials, the source-drain electrode and the interface state of organic materials, this is a very convenient and effective device structure, but this device structure is not suitable for making integrated circuits

First of all, the silicon substrate and Au electrodes are expensive and costly; secondly, this structure uses heavily doped Si as the gate electrode of the device, and it is impossible for an integrated circuit to connect the gate electrodes of all transistors together. Divide

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