Method for preparing step micro-needle array

A technology of microneedle array and step, applied in microneedle, pattern surface photoengraving process, needle head, etc., can solve the problems of high cost and large skin resistance, and achieve the effect of reducing penetration resistance and cost.

Inactive Publication Date: 2010-09-15
SHANGHAI JIAO TONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method uses deep reactive ion etching to process the microneedles, and the cost is relatively high; the height of the microneedles on the prepared microneedle array is the same, so the skin resistance encountered when the microneedle array is used to penetrate the skin is relatively large

Method used

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  • Method for preparing step micro-needle array
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  • Method for preparing step micro-needle array

Examples

Experimental program
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Effect test

Embodiment 1

[0025] like figure 1 As shown, this embodiment includes the following steps:

[0026] A double-polished silicon oxide wafer with a thickness of 1.1mm and a diameter of 75mm was baked in an oven at 180°C for 3 hours, and then coated with a photoresist positive resist of 5 μm on the front of the double-polished silicon oxide wafer, and then baked at 95°C for 30 minutes. figure 1 As shown in a, wherein: silicon dioxide 1 is located on both sides of silicon 2, its thickness is 2-3 μm, and 3 is photoresist positive resist;

[0027] 2. Use the mask plate of the target pattern to expose, and open the photoresist positive window after development, such as figure 1 As shown in b,

[0028] 3. Bake the double-polished silicon oxide wafer again at 90°C for 30 minutes, and then cast a layer of photolithographic positive resist on the back of the double-polished silicon oxide wafer with a thickness of 5 μm, and then bake at 95°C for 30 minutes. figure 1 as shown in c;

[0029] 4. Bake t...

Embodiment 2

[0042] A double-polished silicon oxide wafer with a thickness of 1.1mm and a diameter of 75mm was baked in an oven at 180°C for 3 hours, and then coated with a photoresist positive resist of 5 μm on the front of the double-polished silicon oxide wafer, and then baked at 95°C for 30 minutes. figure 1 As shown in a, wherein: the silicon dioxide layer 1 is located on both sides of the silicon 2, and its thickness is 2-3 μm, and 3 is a positive photoresist;

[0043] 2. Use the mask plate with the target pattern to expose, and open the photoresist positive window after development, such as figure 1 as shown in b;

[0044] 3. Bake the double-polished silicon oxide wafer again at 90°C for 30 minutes, and then cast a layer of photolithographic positive resist on the back of the double-polished silicon oxide wafer with a thickness of 5 μm, and then bake at 95°C for 30 minutes. figure 1 as shown in c;

[0045] 4. Bake the double-polished silicon oxide wafer coated with photoresist on ...

Embodiment 3

[0063] A double-polished silicon oxide wafer with a thickness of 1.1mm and a diameter of 75mm was baked in an oven at 180°C for 3 hours, and then coated with a photoresist positive resist of 5 μm on the front of the double-polished silicon oxide wafer, and then baked at 95°C for 30 minutes. figure 1 As shown in a, wherein: the silicon dioxide layer 1 is located on both sides of the silicon 2, and its thickness is 2-3 μm, and 3 is a positive photoresist;

[0064] 2. Use the mask plate of the target pattern to expose, and open the photoresist positive window after development, such as figure 1 as shown in b;

[0065] 3. Bake the double-polished silicon oxide wafer again at 90°C for 30 minutes, and then cast a layer of photolithographic positive resist on the back of the double-polished silicon oxide wafer with a thickness of 5 μm, and then bake at 95°C for 30 minutes. figure 1 as shown in c;

[0066] 4. Bake the double-polished silicon oxide wafer coated with photoresist on bo...

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Abstract

The invention discloses a method for preparing a step micro-needle array in the technical field of biomedical engineering. The method comprises the following steps of: gapping a silicon etching window on a silicon chip through photoetching and performing wet etching on the silicon in the silicon etching window; cutting the silicon chip to obtain a micro square column array by using a slicing machine, and further cutting the micro square column array to obtain micro square blocks; and finally performing the wet etching on the micro square column array to obtain the step micro-needle array. Micro-needle arrays with different heights are prepared by the method, and the micro-needle arrays puncture into the skin in a progressive mode. Meanwhile, the method has the advantage of simple preparation process, and the step micro-needle array is prepared by adopting the method of combining the wet etching with machining, so the cost is low and the method is convenient to popularize.

Description

technical field [0001] The invention relates to a method for preparing microneedles in the technical field of biomedical engineering, in particular to a method for preparing a stepped microneedle array. Background technique [0002] As a painless and safe drug injection method, transdermal drug delivery technology has attracted people's attention increasingly. Due to the small volume of microneedles, the drug transported by a single microneedle is limited, so the microneedles used for drug delivery are all arrayed to increase the ability to carry drugs. A single microneedle is small in size, so the force when penetrating the skin is also small; the array microneedle integrates several to tens or hundreds of microneedles, and the height of the microneedles is the same, so the process of penetrating the skin Among them, the entire microneedle array is subjected to greater skin resistance. [0003] After searching the prior art documents, it was found that BORIS STOEBER, DORI...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): A61M37/00G03F7/00
CPCA61M37/0015A61M2037/0053
Inventor 刘景全闫肖肖杨春生芮岳峰李以贵
Owner SHANGHAI JIAO TONG UNIV
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