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Device and method for measuring oxygen content in heavily-doped silicon

A technology of oxygen content and heavy doping, applied in the direction of material excitation analysis, can solve the problems of difficult calibration, expensive equipment, difficult sample preparation, etc., and achieve the effects of high sensitivity, low cost, and short measurement time.

Inactive Publication Date: 2010-09-15
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

These test methods either require expensive equipment, or difficult calibration, or require high-energy particle sources, or sample preparation is difficult, so it is necessary to find a new measurement method

Method used

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  • Device and method for measuring oxygen content in heavily-doped silicon
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  • Device and method for measuring oxygen content in heavily-doped silicon

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The sample is a 4-inch antimony-doped p-type heavily doped silicon single wafer with a resistivity of 1.7x10 -3 Ωcm, the laser breakdown spectrum test results are as follows Figure 4 As shown in middle curve 1, the area ratio of the oxygen / silicon emission peak is 0.34, and according to the relational formula measured above, the oxygen concentration It can be concluded that the oxygen content in this heavily doped silicon silicon single crystal sample is 7.3x10 16 cm -3 .

Embodiment 2

[0027] The sample is a 4-inch arsenic-doped N-type heavily doped silicon single wafer with a resistivity of 2.6x10 -3 Ωcm test results such as Figure 4 As shown in middle curve 2, the area ratio of the oxygen / silicon emission peak is 0.64, and according to the relational formula measured above, the oxygen concentration It can be concluded that the oxygen content in this heavily doped silicon silicon single crystal sample is 1.38x10 17 cm -3 .

Embodiment 3

[0029] The sample is a 4-inch boron-doped P-type heavily doped silicon single wafer with a resistivity of 1.3x10 -3 Ωcm, test results such as Figure 4 As shown in middle curve 3, the area ratio of the oxygen / silicon emission peak is 0.98, and according to the relational formula measured above, the oxygen concentration It can be concluded that the oxygen content in this heavily doped silicon silicon single crystal sample is 2.12x10 17 cm -3 .

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Abstract

The invention discloses a device and method for measuring oxygen content in heavily-doped silicon. The device mainly comprises a pulse laser, a condenser lens, a sample stage, an emergent light lens combination, a spectrograph, a computer, a mechanical pump, a vacuum valve, a molecular pump, a vacuum chamber and a sample joy stick. The invention has the technical characteristics of high sensitivity, short measurement time, no requirement on special treatment on samples and the like.

Description

technical field [0001] The invention relates to a semiconductor silicon material, in particular to a method and device for measuring the oxygen content in heavily doped silicon. Background technique [0002] Oxygen content is a very important impurity in silicon materials, and its content has a great impact on the performance of silicon-based electronic devices and silicon-based optoelectronic devices. For ordinary silicon materials, the oxygen content in silicon materials can be determined by Fourier transform infrared absorption spectroscopy. However, this method is ineffective for heavily doped silicon materials, because there are a large number of free electrons or holes in heavily doped silicon materials, and the existence of these free electrons or holes makes infrared light severely absorbed, making infrared spectroscopy unsuitable For the measurement of heavily doped silicon materials. At present, the methods for measuring the oxygen content in heavily doped silico...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/63
Inventor 季振国席俊华毛启楠
Owner HANGZHOU DIANZI UNIV