Manufacturing process for improving capacity of aluminum gallium indium phosphorus light-emitting diodes

Abstract

The invention discloses a manufacturing process for improving the capacity of aluminum gallium indium phosphorus light-emitting diodes. After finishing conventional processes, the technical combination of dry wet etching and cleavage is adopted to replace a diamond knife cutting technology to separate core particles; the dryly etched anisotropy etching can reduce crack of core particle margin, soas to reduce area loss between core particles, can improve single-chip output amount, effectively avoid electric leakage caused by the fact that the cut residual dust attaches to side face, thus improving yield of products, and effectively reducing production cost.

Description

technical field [0001] The invention relates to a quaternary light-emitting diode, in particular to a manufacturing process for improving the production capacity of an aluminum gallium indium phosphide light-emitting diode. Background technique [0002] LEDs are mainly used in dot-matrix displays, traffic lights, indoor and outdoor display screens, automobile tail lights, etc., so they require high reliability. First, it is necessary to epitaxially grow the AlGaInP LED light-emitting structure on the GaAs substrate, and then carry out conventional cleaning, electrode fabrication, photolithography, thinning and other semiconductor processes. The electrode pattern is made on the window layer. The window layer is made of GaP material, GaAs substrate and The layers between the GaP window layers are collectively referred to as epitaxial layers. After the conventional process is completed, testing is required to ensure that the brightness, wavelength, voltage, reverse leakage cur...

AI Technical Summary

Problems solved by technology

The invention uses the chemical etching method to completely replace the "half-cut" in the conventional process, and only needs to cut the chip twice to completely separate the core particles without touching the PN junction surface at all, avoiding hard damage to the PN junction and shortening the production process. cycle, which improves the qualified rate of the device; however, this process step is easily affected by the isotropy of wet etching, and the loss width between the core grains is as high as 20-60um, which greatly reduces the single-chip yield

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