Cavity surface film coating method for improving temperature stability of semiconductor laser

A technology of lasers and semiconductors, applied in semiconductor lasers, lasers, devices for controlling laser output parameters, etc., can solve problems such as increase and reduction of laser slope efficiency

Inactive Publication Date: 2010-11-10
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Application Information

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Problems solved by technology

At the same time, the slope efficiency of the laser decreases with the inc

Method used

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  • Cavity surface film coating method for improving temperature stability of semiconductor laser
  • Cavity surface film coating method for improving temperature stability of semiconductor laser
  • Cavity surface film coating method for improving temperature stability of semiconductor laser

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Embodiment Construction

[0018] Step 1: Take a cleaved InAs / GaAs semiconductor quantum dot laser chip; its lasing wavelength increases linearly with increasing temperature, and the lasing wavelengths at 10°C and 90°C are about 1316nm and 1358nm respectively (see figure 1 ).

[0019] Step 2: Alternately depositing Ta with an optical thickness of λ / 4 on the rear end face of the semiconductor laser chip 10 2 o 5 / SiO 2 Thin film, on the wavelength-reflectance curve, a thin film system 20 whose reflectance increases with the wavelength red shift is obtained, and the other end is used as the exit cavity surface of the laser without coating. Semiconductor quantum dot laser chip after cavity surface coating such as figure 2 shown. Among them Ta 2 o 5 is a high refractive index material, SiO 2 It is a low refractive index material. The central wavelength of the thin film system 20 is 1480 nm. The wavelength-reflectance curve obtained by the coating is as follows image 3 As shown by the middle soli...

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Abstract

The invention relates to a cavity surface film coating method for improving the temperature stability of a semiconductor laser, which comprises the following steps: step 1, taking a semiconductor laser chip after cleavage; step 2, by alternately depositing high low refractivity material of which the optical thickness is lambda/4 on the back end face of the semiconductor laser chip, obtaining a film system increased along with the wavelength red shift reflectivity on a wavelength-reflectivity curve, wherein lambda is the center wavelength of the film system; and step 3, adjusting the center wavelength of the cavity surface reflecting film system of the semiconductor laser and the maser wavelength of the semiconductor laser, so that the maser wavelength in the working temperature range falls in the rising bandwidth of the reflectivity-wavelength curve; and because the maser wavelength of the semiconductor laser generates red shift along with temperature rise, the reflectivity of the semiconductor laser is increased along with the temperature rise, and the cavity surface loss is reduced along with the temperature rise, thereby improving the temperature property of the semiconductor laser.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, in particular to a method for improving the temperature characteristics of a semiconductor laser by optimizing cavity surface coating. Background technique [0002] Semiconductor lasers have the advantages of small size, fast response, good coherence, direct modulation, wavelength and size compatible with optical fibers, etc., and have become crucial core devices in optical communication systems. It is the birth of semiconductor lasers that promotes the formation of optical fiber communication systems, and now the development of fiber-to-the-home in turn puts forward higher requirements on the performance and cost of semiconductor lasers. The development of directly modulated semiconductor lasers without refrigeration as a light source has a huge role in promoting the popularization of fiber-to-the-home, and this puts forward higher requirements for the temperature stability...

Claims

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Application Information

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IPC IPC(8): H01S5/028H01S5/06
Inventor 徐鹏飞杨涛
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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