Preparation method of semiconductor wafer cutting blade material

Abstract

The invention relates to a preparation method of a semiconductor wafer cutting blade material. In the preparation method, high-purity green silicon carbide and black silicon carbide are adopted as raw materials, and a wafer cutting blade material is prepared through the steps of jaw crushing and sifting, wet ball milling classification, pickling, overflow size separation, concentrating and dewatering, drying, blending, fine screening and the like. Silicon carbide blade materials prepared through the method are most in equiareal shape and keep sharp edges and strong cutting power, can minimize TTV of a silicon wafer, and have strong adaptability to cutting fluid such as polyethylene glycol and the like because blade material particles have larger specific area and clean surfaces. Products crushed by a wet ball mill are most in equiareal shape, have high output, and can avoid excessive crushing. The preparation method of the invention can reach over 50% of rate of finished products, and products milled with the technology have more uniform size and distribution of particles, thereby better cutting effect to silicon wafers can be achieved.

Description

technical field [0001] The invention relates to the field of multi-wire cutting, in particular to a method for preparing a cutting edge material for a semiconductor wafer. Background technique [0002] With the rapid development of the integrated circuit industry, the demand for high-quality semiconductor wafers is increasing day by day. The processing of semiconductor silicon wafers is an important link in the manufacture of integrated circuits, and effective silicon wafer cutting technology is the basic guarantee for obtaining silicon wafers with high surface accuracy and surface quality. When using the traditional diamond inner circle cutting, with the continuous increase of the wafer diameter, the thickness of the base body of the blade, the thickness of the cutting edge and the difficulty of tensioning the blade increase, the material loss of the kerf and the wear of the blade during cutting increase, and the quality of the silicon wafer decreases. , it is difficult to...

AI Technical Summary

Problems solved by technology

Since the purity of the silicon material used for semiconductors is generally more than six 9, the price is expensive, so the requirements for the cutting edge are relatively high, and it is difficult to produce such products with ordinary processes

At present, there are mainly the following production methods for cutting blades: the production process of jet mill crushing, the products produced are more than 90% equal in shape, and the yield is also high, but the overall output of jet mill is low, and the produced particles The shape is relatively round, the sharpness is poor, and there are hidden cracks, which are not conducive to cutting; in the prior art, Raymond mills are also used for crushing. Although the output of Raymond mills is high, the yield is low, and the products produced are equal in volume The shape is less, accounting for about 50%, and there are many particles in the shape of needles and flakes, the cutting efficiency is poor, and it is not wear-resistant; in the prior art, there are also traditional wet ball mills for crushing, although the product particles are equal It has many shapes and good sharpness, but the output is low, the yield is low, and the over-grinding is serious; in addition, some existing blade preparation processes still have shortcomings such as long pickling time and high water consumption.

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