Method for preparing crystal silicon wafer cutting edge material

Abstract

The invention relates to a method for preparing a crystal silicon wafer cutting edge material. The crystal silicon wafer cutting edge material is prepared from a high-purity green silicon carbide serving as a raw material by using the steps of jaw crushing, sieving, dry ball milling and grading, acid washing, overflowing and grading, concentrating and dehydrating, drying, blending, fine screening and the like. The method has the following advantages that: the prepared silicon carbide edge material has equal volume, keeps acute edge and has strong cutting capability; the TTV of a crystal silicon wafer is minimized; by chemical cleaning, the material has large specific surface area, clean appearance and strong adaptability with cutting solution such as polyethylene glycol and the like; an adopted dry ball milling and grading system integrates ball milling and grading, and can improve the yield and productivity; the finished product rate of the preparation method can reach 52 percent; and the product milled by adopting the process has more uniform grain size distribution and can reach better crystal silicon wafer cutting effect, and the finished product rate (granularity section suitable for silicon wafer cutting) of the milling technology generally adopted in the industry is about 45 percent.

Description

technical field [0001] The invention relates to the field of cutting and grinding materials, in particular to a method for preparing a crystal silicon chip cutting blade. Background technique [0002] Silicon carbide (SiC) is a man-made material, and no natural silicon carbide minerals have been found on the earth's crust. The production process of artificial silicon carbide was invented by Dr. Acheson in the United States in 1893 and put into industrial production, and its production process has been used until now. Silicon carbide has strong ionic covalent bonds, and about 87% of Si-C bonds are covalent bonds. When bonding, SP3 hybrid orbitals are formed to form the tetrahedral basic structural unit of the diamond-like structure. Silicon carbide has an atomization energy value as high as 1250kJ / mol, and its Debye temperature is also as high as 1200-1430K, which determines the stability of silicon carbide materials to various external effects. SiC has high hardness and me...

AI Technical Summary

Problems solved by technology

In recent years, my country's cutting edge production technology has made some progress. For example, Chinese patent document CN 100360400C discloses a method for preparing a special cutting edge for semiconductor material wire cutting from high-purity 6H-SiC. The production process, the products produced are more than 90% in equal area, and the yield is high, but the overall output of the jet mill is low, the shape of the produced particles is round, the sharpness is poor, and there are hidden cracks, which are not It is beneficial to cutting; in the prior art, Raymond mill is also used for crushing. A

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