TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array base plate and manufacturing method thereof

Abstract

The invention discloses a TFT-LCD (Thin Film Transistor-Liquid Crystal Display) array base plate and a manufacturing method thereof. The manufacturing method comprises the steps of: sequentially depositing a transparent conductive thin film, a source-drain metal thin film and a doped semiconductor thin film on a transparent base plate; forming a figure which comprises a doped semiconductor layer, a source electrode, a drain electrode, a data line and a pixel electrode by a first composition process; depositing the semiconductor thin film; forming a figure which comprises a TFT channel and a semiconductor layer by a second composition process; depositing an insulating thin film and a grid metal thin film; and forming a figure which comprises a grid line and a grid electrode by a third composition process. In the invention, three composition processes are used for manufacturing the TFT-LCD array base plate with a top grid structure. Compared with the traditional three composition processes for manufacturing the array base plate, the manufacturing method of the invention does not need a lift-off peeling process, largely simplifies the process difficulty, and enhances the product yield.

Description

technical field [0001] The invention relates to a liquid crystal display and a manufacturing method thereof, in particular to a TFT-LCD array substrate and a manufacturing method thereof. Background technique [0002] A Thin Film Transistor Liquid Crystal Display (TFT-LCD for short) is a main flat panel display (FPD for short). [0003] figure 1 It is a schematic plan view of an existing TFT-LCD array substrate. Such as figure 1 As shown, an existing array substrate (Array Substrate) includes: a gate line 1 , a data line 2 , a thin film transistor (Thin Firm Transistor, TFT for short) 3 and a pixel electrode 4 . The gate lines 1 are arranged laterally on the transparent substrate 11 , the data lines 2 are arranged vertically on the transparent substrate 11 , and TFTs 3 are arranged at intersections of the gate lines 1 and the data lines 2 . TFT3 is an active switching element. [0004] figure 2 for figure 1 A-A sectional view. Such as figure 2 As shown, the existi...

AI Technical Summary

Problems solved by technology

[0012] However, after etching the second insulating layer to form the undercut of the photoresist, an ashing process of the photoresist is required, so in actual production, it is difficult to maintain the undercut of the photoresist

In addition, there will also be a problem of different degrees of undercut formation, that is, different degrees of inward inclination of the undercut, resulting in a high probability of failure during the lift-off process, resulting in a decrease in the yield

In addition, when the photoresist is ashed, it will pollute the transparent conductive layer, which will bring a very high defect rate, and also bring the corresponding cumbersome processing procedures.

Images