Acceleration sensor element and acceleration sensor having same
An acceleration sensor, acceleration technology, applied in the direction of measurement of acceleration, multi-dimensional acceleration measurement, speed/acceleration/impact measurement, etc., can solve the problems of contact between supporting substrate or cover body, increasing influence, easy bending and deformation, etc., to reduce the gap, The effect of reducing stress and improving impact strength
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Embodiment 1
[0064] figure 1 It is a plan view showing the structure of the acceleration sensor element 10 in the acceleration sensor element 30 with a cover of the first embodiment. figure 2 and image 3 is a cross-sectional view of the covered acceleration sensor element 30 of Embodiment 1, figure 2 yes figure 1 The k-k section view of image 3 yes figure 1 The m-m section view of .
[0065] The covered acceleration sensor element 10 of Embodiment 1, for example, can be applied to the prior art example Figure 16 The acceleration sensor and the like assembled into a protective package made of resin are shown. Therefore, in Embodiment 1, a detailed description will be given centering on the acceleration sensor element 30 with a cover.
[0066]
[0067] In the acceleration sensor element 10 of the first embodiment, the weight part 12 is supported from four directions in the support frame part 11 by the four beam parts 13 having flexibility. The support frame portion 11 is se...
Embodiment 2
[0089] Figure 5 It is a schematic plan view showing the structure of the acceleration sensor element 10 of the second embodiment. In the center of the beam portion 13, a shape is formed in which an annular portion 51 is provided as a compressive stress absorbing portion. The silicon oxide film or the like formed on the surface of the acceleration sensor element 10 has a thermal expansion coefficient smaller than that of silicon, and since the film is formed and annealed at a high temperature of, for example, about 950° C., heat is generated when it is cooled to normal temperature. stress. The weight part 12 and the inner frame 15 are formed from the first layer 24 to the second layer 25. Since the thickness of the second layer 25 is thick, it basically contracts with the thermal expansion coefficient of silicon. It is composed of 24 layers, so the ratio of silicon oxide film is high, and the thermal shrinkage becomes small. Therefore, the beam portion 13 is compressed betw...
Embodiment 3
[0095] Figure 6 It is a schematic plan view showing the structure of the acceleration sensor element 10 of the third embodiment. A shape in which an annular portion 52 is provided as a compressive stress absorbing portion is formed on the inner frame support portion 17 . As in Example 2, there is an effect of preventing buckling of the inner frame support portion 17 . When the inner frame support portion 17 buckles, the inner frame 15 is displaced to approach the upper cover 19 or the lower cover 22 , so it is difficult to narrow the gap 31 . Buckling can be prevented by forming the ring portion 52 on the inner frame support portion 17 . In addition, there is an effect of absorbing the influence of the deformation of the outer frame 16, and it is more difficult to change the output.
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