Trench-type Schottky-barrier diode rectifier and preparation method

A technology of diode rectification and Schottky potential, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve the problem of increased reverse leakage, poor gap filling ability, and decreased reverse blocking ability, etc. problem, to achieve the effect of high voltage reverse blocking ability, overcoming tip discharge effect, and strong gap filling ability
CN101901808AActive Publication Date: 2010-12-01SUZHOU SILIKRON SEMICON CO LTD
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SUZHOU SILIKRON SEMICON CO LTD
Publication Date
2010-12-01

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Abstract

The invention provides a trench-type Schottky-barrier diode rectifier and a preparation method. By using the two shoulders of a conducting poly-silicon T-shaped head in the trench and the silica layers on the extended sections to cover the vertex angles of boss structures on two sides of the trench, the invention, based on the existing trench-type Schottky diode rectifiers, overcomes the problems of increase in inverse current leakage and reduction in inverse blocking capacity caused by the tip discharge effect produced by contact of the vertex angles of the boss and an upper metal layer; moreover, by filling the trench with the conducting poly-silicon instead of aluminum, titanium and other conventional materials of the upper metal layer, on one hand, the invention solves the problem that the reliability of the rectifier is influenced by hollow cavities left during trench filling, and on the other hand, the invention provides more flexible design space for the ratio of the opening width to depth of the trench of the diode rectifier.
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Description

technical field

[0001] The invention relates to a rectifying device and a manufacturing method thereof, in particular to a trench type metal-semiconductor Schottky barrier diode rectifying device and a manufacturing method thereof. Background technique

[0002] As a conversion device from AC to DC, rectifier devices require unidirectional conduction characteristics, that is, low turn-on voltage and small on-resistance during forward conduction, and high blocking voltage and small reverse leakage when reversed.

[0003] Schottky diodes have been used in power supply applications for decades as rectification devices. Compared with PN junction diodes, Schottky diodes have the advantages of low forward turn-on voltage and fast switching speed, which makes them very suitable for switching power supplies and high-frequency applications. The reverse recovery time of the Schottky diode is very short, which is mainly determined by the parasitic capacitance of the device, not by the ...

Claims

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