Angle lapping-free cutting method of silicon chip

Abstract

The invention discloses an angle lapping-free cutting method of a silicon chip, which comprises the following steps of: 1, uniformly coating melted sealing wax on the surface of a glass plate, marking a P or N surface of the silicon chip to be cut, directing consistently, horizontally placing on the surface of the glass plate coated with the sealing wax, rotating the silicon chip while lightly pressing, naturally cooling; 2, placing the cooled silicon chip on the surface of a bench drill worktable provided with a sleeve circular cutter drill, holding a little water leaching silicon carbide with a small soup spoon while starting the cutting of a bench drill, placing at any position of the outer side of a sleeve circular cutter, enabling the water leaching silicon carbide to enter into a grinding area of the silicon chip from a sand feeding hole for grinding and lapping the silicon chip; and 3, after the silicon chip is cut completely, heating the glass plate until the sealing wax is melted, and taking down the surface of the worktable for rectifying a pipe core. The sleeve circular cutter is utilized for cutting and lapping the silicon chip, therefore, the invention has the advantages of good consistency, low damage ratio and low manufacture cost.

Description

technical field [0001] The invention relates to the field of manufacturing mesa rectifier tube cores, in particular to a grinding-free angle cutting method for silicon wafers. Background technique [0002] ZP diode mesa die series are divided into two categories: "spiral type" and "flat type", the specifications are 5A-600A and 100A-3000A respectively, there are more than 60 types, and the reverse peak voltage range is 800V-3000V; KP Thyristor mesa die series specifications are 5A-400A, a total of 15 kinds, and its forward and reverse peak voltage range is 1000V-2500V. The first step in the manufacture of mesa dies is to cut the diffused silicon wafer. There are three common cutting methods for silicon wafers: 1. Wire cutting method. The cutting principle is to use the charged molybdenum wire to contact the edge of the silicon wafer to generate electric sparks to cut the silicon wafer. This cutting method is caused by the high temperature of the arc. , so that the peripher...

AI Technical Summary

Problems solved by technology

This cutting method can get the mesa die while cutting, but its biggest defect is that the angle of the mesa cannot be consistent. Because the whole process is manual operation, it is difficult to control the size of the mesa die to be exactly the same, and the working hours are long.

Great environmental pollution