Antistatic gallium nitride based luminescent device and manufacturing method thereof

Abstract

The invention discloses an antistatic light-emitting diode device structure and a manufacturing method thereof. The method comprises the following steps: growing a buffer layer, an N-shaped gallium nitride layer, a luminescent layer multiple quantum well (MQW) structure and a P-shaped gallium nitride layer on a sapphire substrate in sequence; etching an epitaxial layer between a light-emitting diode and a protection diode on the substrate; manufacturing the P electrode and the N electrode of the light-emitting diode; respectively connecting the P electrode and N electrode of the light-emitting diode with the N electrode and P electrode of the protection diode; and integrating the protection diode and the light-emitting diode in a light-emitting diode device on the basis of not changing the existing gallium nitride base epitaxial structure, thus improving antistatic capacity of products, reducing parallel protected diodes in packaging subsequent products, reducing working procedures, and lowering product cost.

Description

technical field [0001] The invention relates to a structure and a manufacturing method of a gallium nitride (GaN)-based light-emitting diode device, especially by integrating a light-emitting diode and a protection diode in the light-emitting device without changing the epitaxial structure of the existing light-emitting device. Antistatic properties of light-emitting diodes. Background technique [0002] Light-emitting diodes (LEDs) have the advantages of high efficiency, energy saving, and environmental protection. They are widely used in traffic indication, indoor and outdoor full-color display, LCD TV backlight, etc. In particular, the use of high-power LEDs may realize semiconductor solid-state lighting. A new generation of light sources has entered thousands of households, causing a revolution in the history of human lighting. Among them, the blue LED chip grown on the sapphire substrate with gallium nitride epitaxy is coated with yellow light phosphor, and the blue lig...

AI Technical Summary

Problems solved by technology

There are two common gallium nitride substrate materials, namely sapphire and silicon carbide. The poor machining performance of silicon carbide, high price and patent issues limit its application. Therefore, the current substrates for gallium nitride epitaxial growth are mainly It is sapphire, and the lattice mismatch between GaN epitaxial layer and sapphire is quite large, so growing GaN on sapphire is easy to cause a large number of defects, and these defects greatly reduce the antistatic ability of light-emitting devices; on the other hand, due to the sapphire substrate The bottom is not conductive, and the static electricity on the light-emitting diodes cannot be effectively released, so the gallium nitride-based light-emitting diodes on the sapphire substrate have antistatic problems.

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