Direct writing method for in situ reduction metal nano-structure
A metal nanostructure and in-situ technology, which is applied in the field of in-situ reduction of metal nanostructures and direct writing of in-situ reduction of metal nanostructures, can solve the problems of high cost, low efficiency, and few types of materials, and achieve high repeatable manufacturing accuracy , simple process and high manufacturing efficiency
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Example Embodiment
[0019] Example 2: AgNO with a mass ratio of 85:11 3 And CH 3 CHO is dissolved in ammonia water to make a mixed solution with a concentration of 252g / L, and the quartz plate is selected as the substrate 3, and the made AgNO 3 With CH 3 The ammonia solution of CHO is coated on the surface of the substrate to form a mixed solution film 1 with a thickness of 200nm; the scanning voltage of the STM scanning tunnel microscope is 10V, the electric pulse frequency is 100Hz, and the speed of the scanning probe 2 is 80nm / s.
Example Embodiment
[0020] Example 3: AgNO with a mass ratio of 85:11 3 And CH 3 CHO is dissolved in ammonia water to make a mixed solution with a concentration of 252g / L, and the quartz plate is selected as the substrate 3, and the made AgNO 3 With CH 3 The ammonia solution of CHO is coated on the surface of the substrate to form a mixed solution film 1 with a thickness of 500 nm; the scanning voltage of the STM scanning tunnel microscope is 30V, the electric pulse frequency is 500 Hz, and the scanning probe 2 speed is 50 nm / s.
Example Embodiment
[0021] Example 4: AgNO with a mass ratio of 85:11 3 And CH 3 CHO is dissolved in ammonia water to make a mixed solution with a concentration of 252g / L, and the quartz plate is selected as the substrate 3, and the made AgNO 3 With CH 3 The ammonia solution of CHO is coated on the surface of the substrate to form a mixed solution film 1 with a thickness of 800nm; the scanning voltage of the STM scanning tunnel microscope is 40V, the electric pulse frequency is 1000Hz, and the scanning probe 2 speed is 0nm / s (that is, its Stand still) to form dot-like nanostructures.
PUM
Property | Measurement | Unit |
---|---|---|
Thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap