Direct writing method for in situ reduction metal nano-structure

A metal nanostructure and in-situ technology, which is applied in the field of in-situ reduction of metal nanostructures and direct writing of in-situ reduction of metal nanostructures, can solve the problems of high cost, low efficiency, and few types of materials, and achieve high repeatable manufacturing accuracy , simple process and high manufacturing efficiency

Inactive Publication Date: 2010-12-22
XI AN JIAOTONG UNIV
1 Cites 17 Cited by

AI-Extracted Technical Summary

Problems solved by technology

However, these existing methods not only can process fewer ty...
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Abstract

The invention discloses a direct writing method for in situ reduction metal nano-structure, which utilizes the property that the majority of metal ions can undergo reduction reaction under thermal catalysis condition, induces the reduction reaction of the metal ions by using the current joule heat between an STM scanning probe and a substrate to obtain metal atoms which are subjected to in-situ deposition, and directly obtains the nano-structure from the substrate surface. The principle is as follows: when an STM is used for scanning and imaging, the tunnel current between the probe and the sample surface generates current joule heat in the local micro-area of the sample when flowing through the sample, the reduction reaction of the oxidized metal ion thin layer is induced in the presence of reducing agent, and the meal ions are reduced into the metal atoms which are subjected to in-situ deposition on the substrate surface to form the metal nano-structure. The manufacturing precision of the method can reach nano level, the process is simple, the probe does not need to be pre-treated or soaked many times, continuous operation can be performed, no specific requirement is imposed on the operation environment, the size of the nano-structure is adjustable, and a complex nano-structure shape can be manufactured, therefore the method is a novel nano-processing process based on a scanning probe.

Technology Topic

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  • Direct writing method for in situ reduction metal nano-structure
  • Direct writing method for in situ reduction metal nano-structure
  • Direct writing method for in situ reduction metal nano-structure

Examples

  • Experimental program(9)

Example Embodiment

[0019] Example 2: AgNO with a mass ratio of 85:11 3 And CH 3 CHO is dissolved in ammonia water to make a mixed solution with a concentration of 252g/L, and the quartz plate is selected as the substrate 3, and the made AgNO 3 With CH 3 The ammonia solution of CHO is coated on the surface of the substrate to form a mixed solution film 1 with a thickness of 200nm; the scanning voltage of the STM scanning tunnel microscope is 10V, the electric pulse frequency is 100Hz, and the speed of the scanning probe 2 is 80nm/s.

Example Embodiment

[0020] Example 3: AgNO with a mass ratio of 85:11 3 And CH 3 CHO is dissolved in ammonia water to make a mixed solution with a concentration of 252g/L, and the quartz plate is selected as the substrate 3, and the made AgNO 3 With CH 3 The ammonia solution of CHO is coated on the surface of the substrate to form a mixed solution film 1 with a thickness of 500 nm; the scanning voltage of the STM scanning tunnel microscope is 30V, the electric pulse frequency is 500 Hz, and the scanning probe 2 speed is 50 nm/s.

Example Embodiment

[0021] Example 4: AgNO with a mass ratio of 85:11 3 And CH 3 CHO is dissolved in ammonia water to make a mixed solution with a concentration of 252g/L, and the quartz plate is selected as the substrate 3, and the made AgNO 3 With CH 3 The ammonia solution of CHO is coated on the surface of the substrate to form a mixed solution film 1 with a thickness of 800nm; the scanning voltage of the STM scanning tunnel microscope is 40V, the electric pulse frequency is 1000Hz, and the scanning probe 2 speed is 0nm/s (that is, its Stand still) to form dot-like nanostructures.
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PUM

PropertyMeasurementUnit
Thickness100.0 ~ 1000.0nm
tensileMPa
Particle sizePa
strength10

Description & Claims & Application Information

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