Read amplifier with bit line capacitance detection

Abstract

The invention discloses a read amplifier with bit line capacitance detection. Charge voltage of a capacitor to be detected is obtained from a bit line capacitor by using a capacitance charge voltage generating circuit to be tested, reference capacitor charge voltages of the known reference capacitors are respectively obtained by using the reference capacitor charge voltage, and the charge voltage of the capacitor to be detected and the reference capacitor charge voltages are sent to a bit capacitance detection circuit for detecting and comparing, and the size of the bit line capacitance can be detected by comparing the bit line capacitance with the charge curve of the known reference capacitor so as to achieve the purpose of detecting and controlling the bit line capacitor and improving the response speed and the response accuracy of the circuit.

Description

technical field [0001] The present invention relates to a sense amplifier, in particular to a sense amplifier with bit line capacitance detection. Background technique [0002] Semiconductor memories are generally considered to be very important components in digital integrated circuits, and they play a vital role in building microprocessor-based application systems. In recent years, more and more people have embedded various memories in the processor to make the processor have higher integration and faster working speed, so the performance of the memory array and its peripheral circuits is largely determined. It determines the working condition of the whole system, including speed, power consumption and so on. [0003] The most important among various peripheral devices of the semiconductor memory is the sense amplifier. Since the sense amplifier is usually used to sample the slight signal change on the bit line and amplify it when the memory cell is read, so as to determ...

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Problems solved by technology

[0005] To sum up, it can be known that the read-write amplifiers of the prior art have the problem that the capacitance of the bit line increases due to the large storage capacity, which affects the response speed and precision of the circuit. Therefore, it is necessary to propose improved technical means to solve this problem.

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