Gas distributor for uniform gas emission

Abstract

The invention relates to a gas distributor for uniform gas emission. The gas distributor is generally arranged on a gas inlet section on a chemical vapor deposition device and used for providing uniform inlet gas for a reaction chamber. The gas distributor comprises at least one gas inlet pipe and over two closed gas distribution cavities, which are intercommunicated; the gas inlet pipe and the gas distribution cavities are fixedly connected in turn along the running direction of gas flow; the adjacent two gas distribution cavities are mutually spaced by a connecting wall; and over one gas distribution hole is distributed on the connecting wall. The final outlet gas flow speeds are equal by adjusting the heights or the lengths of the gas distribution cavities and adjusting the arrangement position and aperture size of the gas distribution hole on each connecting wall. The gas distributor has the advantages of simple structure, easy processing, convenient assembly and maintenance and low cost, can provide uniform inlet gas for the reaction chamber, ensures the uniformity and consistency of the inlet gas of the chemical vapor deposition device, and is favorable for uniform growth of a film.

Description

technical field [0001] The invention relates to a gas distribution device applied to an inlet section of chemical vapor deposition equipment, in particular to a gas distributor for uniform gas outlet. Background technique [0002] The deposition of thin film materials by chemical vapor deposition (referred to as CVD) usually requires various raw materials and carrier gases. Raw materials include raw material components (usually also in gas form) that participate in chemical reactions and form film products; carrier gases include various Gases that carry raw materials, such as hydrogen, nitrogen, etc., these carrier gases only carry raw materials into the reaction chamber, and do not participate in chemical reactions themselves. [0003] One of the important indicators of thin film preparation is the uniformity of its thickness, doping concentration and composition. To grow a thin film material with uniform thickness, doping concentration and composition, according to the re...

AI Technical Summary

Problems solved by technology

Especially for traditional vertical reactors and vertical spray reactors, only by enlarging the diameter of the loading base can the requirement of increasing the loading volume be met, but the gas enters the reaction chamber from the central position, which causes The uneven distribution along the radial direction is becoming more and more serious, and the design requirements for a uniform temperature field are also increased after the diameter is increased, resulting in uneven distribution of the gas flow field and temperature field of the CVD reactor, which is difficult to meet the needs of film growth.

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