Method for mixing nitrogen element in gate silicon oxide layer and process for manufacturing gate silicon oxide layer structure

Abstract

The invention provides a method for mixing a nitrogen element in a gate silicon oxide layer, which comprises the following steps of: introducing N2 and O2 in a gas flow ratio of 1:3 in a main oxidation process or an annealing process for forming the gate silicon oxide layer; and forming a silicon oxynitride layer on the formed silicon oxide layer so that the nitrogen element is diffused to the gate silicon oxide layer. In the method for mixing the nitrogen element in the gate silicon oxide layer, N2O is substituted by adopting mixed atmosphere of the N2 and the O2 in a specific ratio, so that the nitrogen element can be mixed into the gate silicon oxide layer effectively in a high-temperature furnace which is not provided with an independent N2O supply system. Compared with the annealing process performed merely in inert gases, the annealing process performed under the process condition of the specific mixed atmosphere has the low heat budget value, and the quality and compactness of the gate silicon oxide layer formed by oxidizing while annealing are excellent.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing technology, in particular to a method for doping nitrogen elements in a gate silicon oxide layer and a manufacturing process for a gate silicon oxide layer structure. Background technique [0002] The preparation process of the gate silicon oxide layer is a key technology in the semiconductor manufacturing process, which directly affects and determines the electrical characteristics and reliability of the device. As the size of semiconductor devices becomes smaller and smaller, nitrous oxide (N 2 O) gas diffuses nitrogen into the gate oxide layer to improve the properties of the gate silicon oxide layer. The gate oxide layer doped with nitrogen has a relatively high dielectric constant, which can effectively block the diffusion of boron from P+ polycrystalline and solve the problem of boron penetration. At the same time, a small amount of nitrogen atoms distributed at the interfa...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a method for doping nitrogen in the gate silicon oxide layer and a manufacturing process for the structure of the gate silicon oxide layer, so as to solve the problem that the high temperature furnace cannot provide N 2 Nitrogen Doping in Gate Silicon Oxide Layer in O Atmosphere