Method for removing optical resist after all-wet etching process

Abstract

The invention discloses a method for removing optical resist after an all-wet etching process, belongs to a method for removing optical resist after a GaN etching process in LED processing technique and comprises liquid formulation and using method. The method comprises the following steps of: adding a proper amount of hydrogen peroxide into alkaline solution, soaking wafer in the alkaline solution for a period, taking the wafer out, flushing the wafer and shaking the wafer to dry, and then the optical resist on the surface of the wafer is removed completely. The method is suitable for removing any optical resist on an underlay that does not react with alkaline solution, the optical resist in liquid can be removed effectively by using the strong oxidizing property of hydrogen peroxide; besides, the method makes operation simple and convenient and the flow very simple and therefore is suitable for removing optical resist in large-scale production; and the cost of the method is low.

Description

technical field [0001] The invention relates to a photoresist removal technology, a technology for removing glue after GaN etching in the LED industry, in particular to a method for removing glue after full wet etching. Background technique [0002] The LED industry is one of the most important microelectronic fields in today's high-tech fields, and in the LED manufacturing process, it is necessary to use etching technology to remove the P-type gallium nitride (GaN) layer in some areas, exposing the N-type gallium nitride (GaN) layer. ) layer, and the photoresist used as a mask in the etching process becomes a relatively large problem in the removal after etching, because the photoresist becomes relatively hard after being etched, so that it can be removed with ordinary glue removal solution It is difficult to completely ensure that it is removed completely. If the dry method is used to remove the glue, the indium tin oxide (ITO) film on the wafer surface will be damaged. Th...

AI Technical Summary

Problems solved by technology

[0003] There are many ways to remove photoresist, conventional wet degumming has: 1, organic solution degumming (such as acetone or N-methylpyrrolidone (NMP) etc.), practice has proved that only pure organic solution cannot To ensure the effect of deglue after etching in the production process, there will always be a certain proportion of residual glue; 2. Sulfuric acid + hydrogen peroxide, this method can remove the photoresist on the bare chip, but for the wafer on which the indium tin oxide film has been deposited Do not use acidic solution, otherwise it will react with indium tin oxide; 3. Alkaline solution for degumming, such as developer and other alkaline solutions, are not effective in removing the etched photoresist, and there will be Some residues will affect the subsequent process