Consumption type N-type lateral double-diffusion metal-oxide semiconductor for reducing voltage

A lateral double diffusion, semiconductor tube technology, applied in the direction of semiconductor devices, electrical components, circuits, etc., can solve the problems of inability to drive circuits, small current capacity, low breakdown voltage, etc., to achieve simple circuit architecture, enhanced freedom, and preparation. Craft Compatible Effects
CN101969072AActive Publication Date: 2011-02-09SOUTHEAST UNIV
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Patent Information

Authority / Receiving Office
CN Β· China
Current Assignee / Owner
SOUTHEAST UNIV
Publication Date
2011-02-09

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Abstract

The invention relates to a consumption type N-type lateral double-diffusion metal-oxide semiconductor for reducing voltage, which comprises a P-type semiconductor substrate, wherein an N-type buried layer, a P-type well region, an N-type well region and an N-type drift region are arranged on the P-type semiconductor substrate; a P-type contact region, an N-type source region and an N-type channelinjection region are arranged near the left side of the surface of the P-type well region; a P-type injection region is arranged in the P-type well region; the left end boundary of the P-type injection region is arranged below the N-type source region; the right end boundary of the P-type injection region is adjacent to the N-type drift region on a drain terminal; and the P-type contact region and a polycrystalline silicon electrode are connected through an interconnection metal cable to be used as a grid. The structure of the invention greatly reduces the threshold voltage of the consumptiontype N-type lateral double-diffusion metal-oxide semiconductor; a metal cable of a drain is directly connected to a high-voltage power supply in circuit application; the metal cable of the grid is grounded; and the metal cable of the drain is directly connected to a low-voltage circuit so as to provide a low-voltage power supply for the low-voltage circuit.
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Description

Technical field

[0001] The invention relates to the field of power semiconductor devices, and more specifically, to a new structure of a fully isolated depletion type high voltage N-type lateral double diffused metal oxide semiconductor tube suitable for a step-down circuit. Background technique

[0002] Power semiconductor devices are the basic electronic components for energy control and conversion in power electronic systems. The continuous development of power electronic technology has opened up a wide range of applications for semiconductor power devices. Modern power electronic devices and related products represented by horizontal double-diffusion metal oxide semiconductor transistors are playing an increasingly important role in power-using occasions such as industry, energy, and transportation. They are electromechanical integration equipment, new energy technology, space and ocean Technology, office automation, and household appliances to achieve high-performance, high-...

Claims

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