Nonvolatile resistance-variable storage and preparation method thereof
A non-volatile, resistive change storage technology, applied in static memory, digital memory information, information storage, etc., can solve the problems of high energy consumption and high voltage, and achieve easy processing, simple structure, and stable high and low resistance state alternate transition The effect of the characteristic
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Embodiment 1
[0037] Example 1: Preparation of non-volatile resistive memory cells based on AgO thin films
[0038] (1) if figure 1 As shown, a silicon wafer is selected as the substrate 5, and then the substrate is fixed on the sample stage, and a layer of Cu thin film is prepared on the substrate 5 as the bottom electrode 4 by pulsed laser deposition;
[0039] (2) Prepare the AgO thin film 3 on the bottom electrode 4, the specific process is as follows: the target used can be a silver target or an AgO target, and the chamber of the deposition system is evacuated to 5×10 -4 Pa, fill the chamber with oxygen and keep the oxygen pressure at 100Pa and the substrate temperature at room temperature by adjusting the oxygen intake volume and the pumping volume of the mechanical pump; start the KrF excimer laser, focus the laser beam on the Ag target, and The working frequency is 6Hz, start to deposit AgO film; after 30 minutes of deposition, turn off the laser and end the deposition process;
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Embodiment 2
[0048] Embodiment 2: Based on Ag 3 o 2 Preparation of Thin Film Nonvolatile Resistive Memory Unit
[0049] (1) Select a silicon wafer as the substrate, then fix the substrate on the sample stage, and prepare a layer of Cu thin film on the substrate as the bottom electrode by pulsed laser deposition;
[0050] (2) prepare Ag on the bottom electrode 3 o 2 Thin film, the specific process is as follows: choose silver or Ag 3 o 2 target, the deposition system chamber was evacuated to 5×10 -4 Pa, fill the chamber with oxygen and keep the oxygen pressure at 200Pa and the substrate temperature at about 150°C by adjusting the oxygen intake volume and the pumping volume of the mechanical pump; start the KrF excimer laser and focus the laser beam on the Ag target , the laser operating frequency is 6Hz, start to deposit Ag 3 o 2 thin film; after 60 minutes of deposition, turn off the laser and end the deposition process;
[0051] (3) Using the pulsed laser deposition method on the...
Embodiment 3
[0053] Embodiment 3: Based on Ag 2 Fabrication of Nonvolatile Resistive Memory Cell Based on O Thin Film
[0054] (1) Select a silicon wafer as the substrate, then fix the substrate on the sample stage, and prepare a layer of Cu thin film on the substrate as the bottom electrode by pulsed laser deposition;
[0055] (2) prepare Ag on the bottom electrode 2 O thin film, the specific process is as follows: choose silver or Ag 2 O target, the chamber of the deposition system was evacuated to 5×10 -4 Pa, fill the chamber with oxygen and keep the oxygen pressure at 10Pa and the substrate temperature at about 300°C by adjusting the oxygen intake volume and the pumping volume of the mechanical pump; start the KrF excimer laser and focus the laser beam on the Ag target , the laser operating frequency is 6Hz, start to deposit Ag 2 O thin film; after 120 minutes of deposition, turn off the laser and end the deposition process;
[0056] (3) Using the pulsed laser deposition method on...
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