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Large-area titanium dioxide nanotube film as well as preparation method and application thereof

A titanium oxide nanotube and large-area technology, applied in chemical instruments and methods, chemical/physical processes, physical/chemical process catalysts, etc., can solve the problem that the structure and performance of photocatalyst materials are difficult to further modulate, and the structure and size of materials can be controlled In order to achieve the effect of photoelectric integrated catalysis, good electrocatalytic activity and good mechanical properties

Inactive Publication Date: 2011-02-16
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the above-mentioned preparation techniques cannot meet the requirements of practical applications. The main shortcomings are: (1) the structure and size of the prepared materials are not highly controllable, (2) they cannot be prepared in large quantities, and (3) they are prepared The structure and performance of the photocatalyst material are not easy to be further modulated, which affects the improvement of catalytic efficiency. (4) The obtained nanostructured TiO 2 Both require further curing on other load materials for application

Method used

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  • Large-area titanium dioxide nanotube film as well as preparation method and application thereof
  • Large-area titanium dioxide nanotube film as well as preparation method and application thereof
  • Large-area titanium dioxide nanotube film as well as preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Pull out ordered transparent films of carbon nanotubes from carbon nanotube arrays in pullable films;

[0059] Spread carbon nanotube films with different directions on a single crystal silicon wafer with a size of 2cm×5cm, and the thickness of the silicon wafer is 500 microns;

[0060] Put the silicon wafer covered with the carbon nanotube film in the middle of a 1-inch horizontal tube furnace, feed argon gas with a flow rate of 300 standard cubic centimeters per minute, and exhaust for 10 minutes;

[0061] Start to heat the furnace. When the temperature of the furnace rose to 300°C, the carrier gas containing titanium tetraisopropoxide was passed into the furnace. The main component of the carrier gas was argon, and the flow rate was 300 standard cubic centimeters per minute. The time is 10 minutes. After the reaction is over, first turn off the carrier gas, keep the argon flow at 300 standard cubic centimeters per minute, let the furnace cool down naturally, and take...

Embodiment 2

[0065] Pull out ordered transparent films of carbon nanotubes from carbon nanotube arrays in pullable films;

[0066] Spread carbon nanotube films with different directions on a single crystal silicon wafer with a size of 2cm×5cm, and the thickness of the silicon wafer is 500 microns;

[0067] Put the silicon wafer covered with the carbon nanotube film in the middle of a 1-inch horizontal tube furnace, feed argon gas with a flow rate of 300 standard cubic centimeters per minute, and exhaust for 10 minutes;

[0068] Start to heat the furnace. When the temperature of the furnace rose to 300°C, the carrier gas containing titanium tetraisopropoxide was passed into the furnace. The main component of the carrier gas was argon, and the flow rate was 300 standard cubic centimeters per minute. The time is 10 minutes. After the reaction is over, first turn off the carrier gas, keep the argon flow at 300 standard cubic centimeters per minute, let the furnace cool down naturally, and take...

Embodiment 3

[0071] Pull out the ordered continuous film of carbon nanotubes from the carbon nanotube array of the pullable film, suspend the carbon nanotube film with a metal support, and then put the suspended carbon nanotube film into a 1-inch double-temperature zone horizontal tube furnace Right in the middle of the second temperature zone; a quartz boat is placed in the middle of the first temperature zone of the double temperature zone horizontal tube furnace, and the inside is filled with tetraisopropoxide titanium solution, with a volume of 10 milliliters. Argon gas with a flow rate of 300 standard cubic centimeters per minute was introduced and exhausted for 10 minutes. Then, the temperature of the first temperature zone (the area where the titanium tetraisopropoxide solution is placed) is controlled to be 120°C, and the temperature of the second temperature zone (the place where the silicon wafer is placed) is 300°C. In the subsequent process, the argon flow rate was kept constan...

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Abstract

The invention relates to a large-area titanium dioxide nanotube film as well as a preparation method and application thereof. The large-area titanium dioxide nanotube film comprises a template formed by a carbon nanotube order film and nano titanium dioxide layers coated on the outer walls of carbon nanotubes forming the template. The carbon nanotube orderly film is used as the template in the preparation method, and the preparation method comprises the step of coating the nano titanium dioxide layers on the carbon nanotubes forming the template to form a titanium dioxide nanotube film. The titanium dioxide nanotube film can be used as a photoelectric integrated catalytic material for application, has adjustable structure and size, the preparation method is simple and easy to apply and has high efficiency and low cost, and meanwhile, the titanium dioxide nanotube film can be applied by adopting various modes, has photoelectric integrated catalytic function and high catalytic activity, and is suitable for being widely applied to the fields of photocatalysis, solar utilization, photoelectric conversion and the like.

Description

technical field [0001] The invention relates to a photocatalyst material, its preparation method and application, in particular to a large-area titanium oxide nanotube film, a method for preparing the large-area titanium oxide nanotube film in one step at low temperature and its application. Background technique [0002] Since the degree of environmental pollution has exceeded the limit of natural purification ability, environmental pollution has become one of the major issues affecting human survival and development. As an efficient method for purifying pollutants in air and water, semiconductor photocatalysis technology has become a research hotspot in the field of environmental pollution control. [0003] The research focus of semiconductor photocatalysis technology is to develop photocatalyst materials with good performance. Existing research results have shown that nano-TiO 2 The photocatalytic material has many advantages: low cost, non-toxic, large specific surface,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J21/18B01J21/06
Inventor 李清文刘向阳邸江涛卞卫国
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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