Silicon-on-insulator integrated great-current P-type combined semiconductor device

Abstract

The invention relates to a silicon-on-insulator integrated great-current P-type combined semiconductor device, comprising an N-type substrate, an oxide-buried layer arranged on the N-type substrate and an N-type epitaxial layer arranged on the oxide-buried layer. The N-type epitaxial layer is divided into a region (I) and a region (II), wherein the region (I) comprises a P-type drift region, an N-type deep well, a P-type buffer well, an N-type drain region, a P-type source region and an N-type body contact region, wherein a silicon surface is provided with a field oxide layer and a gate oxide layer, the gate oxide layer is provided with a polysilicon gate; the region (II) comprises a P-type transistor drift region, an N-type deep well, a P-type triode buffer well, an N-type emitter region, a P-type base region, a P-type source region and an N-type body contact region, a silicon surface is provided with a field oxide layer and a gate oxide layer, and the gate oxide layer is provided with a polysilicon gate. The silicon-on-insulator integrated great-current P-type combined semiconductor device is characterized in that the P-type base region is coated in the P-type buffer region, and drain metal on the N-type drain region is communicated with base metal on the P-type base region through a metal layer. The invention remarkably improves the current density of the device under the conditions that the area of the device is not increased and other performances of the device are not weakened.

Description

technical field [0001] The invention relates to the field of high-voltage power semiconductor devices, and relates to a silicon-on-insulator integrated high-current P-type combined semiconductor device suitable for high-voltage applications with improved current density. Background technique [0002] With the increasing demand for modern life, the performance of power semiconductor devices has attracted more and more attention. Among them, the integration, high withstand voltage, high current and good isolation ability of power semiconductor devices are the most important factors for people. technical requirements. The factors that determine the ability of power integrated circuits to handle high voltage and high current are not only the types of power semiconductor devices, but also the structure and manufacturing process of power semiconductor devices. [0003] For a long time, the power semiconductor devices used by people are high-voltage transistors and high-voltage in...

AI Technical Summary

Problems solved by technology

[0007] A big problem surrounding silicon-on-insulator lateral insulated-gate bipolar devices is that the current density is not high enough compared to vertical devices, so high current drive capability is often obtained by enlarging the device area, thus costing a lot of money. die area, increasing the cost

Images