Semiconductor structure for increasing integration density of high-voltage integrated circuit device and manufacturing method

Abstract

The invention relates to a semiconductor structure for increasing integration density of a high-voltage integrated circuit device and a manufacturing method. Aiming at the problems of large occupation area of PN junction isolation and penetration diffusion adopted in a high-voltage integrated circuit and high step, high electric field, high stress and poor clamping hidden trouble of conventional deep slot isolation, a deep slot diffusion isolation and deep slot penetration diffusion structure is adopted to realize improvement on the integration density of the high-voltage device and promotion on the performance of the device. The method can reduce over 35 percent of high-voltage integrated circuit area at most, improve the integration density of the high-voltage integrated circuit, thin the thickness of an epitaxial layer compared with the common penetration structure, simplify the process design of the high-voltage integrated circuit device structure and effectively solve the high step, high electric field, high stress and poor clamping hidden trouble of the conventional deep slot isolation structure. The method is applied in the fields of structure design and manufacture of high-voltage semiconductor devices and integrated circuits.

Description

technical field [0001] The invention relates to a semiconductor structure of a high-voltage-resistant semiconductor integrated circuit, in particular to a semiconductor structure and a manufacturing method for increasing the integration density of a high-voltage integrated circuit device, which is suitable for the structural design and manufacturing fields of a high-voltage semiconductor device and an integrated circuit. Background technique [0002] In the structure and manufacture of high-voltage semiconductor devices and integrated circuits, especially those that require isolation between devices within the semiconductor and low-resistance connections deep inside, PN junction isolation and buried diffusion layers ( hereinafter referred to as the buried layer) plus the same type of penetration diffusion layer (hereinafter referred to as penetration), combined with silicon wafer epitaxy and other methods to obtain an appropriate structure to meet the needs of specific integr...

AI Technical Summary

Problems solved by technology

[0007] Aiming at the problems of increased circuit area in the above-mentioned high-voltage integrated circuit and high steps, high electric field, high stress and poor clamping of the deep trench isolation sidewall dielectric layer, the present invention provides a semiconductor structure that increases the integration density of high-voltage integrated circuit devices and manufacturing method

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