Method for preparing efficient photoelectronic device based on homoepitaxy
A technology of optoelectronic devices and inorganic media, which is applied in the direction of laser parts, lasers, electrical components, etc., can solve the problems of large-scale industrial production of LED devices and other problems, and achieve the goal of improving photoelectric conversion efficiency, high photoelectric conversion efficiency and device quality Effect
Inactive Publication Date: 2011-02-16
江苏华功半导体有限公司
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This will lead to the large-scale industrial production of LED devices being affected
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[0020] As shown in Figure 2, in the preparation process of this embodiment, a mask layer 2 needs to be prepared on a homogeneous self-supporting (thick film) GaN substrate 1, and after etching, a mask layer 2 is formed on a homogeneous self-supporting (thick film) GaN substrate 1 Forming a window area 3 with a certain depth. After that, homogeneous growth is carried out on the homogeneous self-supporting (thick film) GaN substrate 1 with the pattern 3 and the mask 2 by MOVPE method to obtain the cantilever epitaxial non-doped GaN layer 5 . Finally, an n-type Si-doped GaN layer 6 , an InGaN / GaN quantum well active region 7 and a p-type Mg-doped GaN layer 8 are sequentially grown on the cantilever epitaxial non-doped GaN layer 5 . The main process is as follows:
[0021] 1. Deposit a 1-5 μm thick SiO2 film 2 on a homogeneous self-supporting (thick film) GaN substrate 1 by plasma-enhanced chemical vapor deposition (PECVD);
[0022] 2. On the basis of step 1, use photolithograph...
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Abstract
The invention discloses a method for preparing an efficient photoelectronic device based on homoepitaxy, belonging to the preparation field of photoelectronic devices and comprising the following steps: depositing an organic or inorganic medium material on a gallium nitride homogenous self-supporting substrate (thick film) as an etching mask; drilling windows in the geometrical shapes on the mask by adopting methods of photoetching and etching, transferring the geometrical shapes on the mask to the homogenous self-supporting substrate (thick film) by physical, chemical and other etching methods, and ensuring a certain height different existing between a pattern area and the area protected by the mask; and molding a homoepitaxy GaN based LED or LD device structure on the substrate with well-prepared patterns thereon by a metallorganic chemical vaporous deposition, a molecular beam epitaxy or a hydride vapour phase epitaxy method. By the invention, the homogenous self-supporting substrate (thick film) GaN substrate can be prevented from warp deformation effectively, thus improving the efficiency of the photoelectronic device.
Description
technical field [0001] The invention relates to a method for preparing optoelectronic devices such as high-efficiency and high-power gallium nitride-based light-emitting diodes (LEDs) and blue lasers (LDs) based on a homoepitaxial method, and belongs to the field of preparation of optoelectronic devices. Background technique [0002] GaN-based nitride semiconductor light-emitting diodes (LEDs), with their high theoretical photoelectric conversion efficiency and stability under harsh working conditions, have received extensive attention from scientific research and industry and commerce, and have aroused great interest. GaN-based LED is currently the key light source for the development of semiconductor solid-state lighting and the promotion of the worldwide lighting revolution. In addition, as a lighting source, its advantages such as small size and light weight are more advantageous than previous lighting sources. The development of high-brightness LEDs adapts to the basic...
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IPC IPC(8): H01L33/00H01S5/343
Inventor 于彤军方浩陶岳彬李兴斌陈志忠杨志坚张国义
Owner 江苏华功半导体有限公司